Effect of strain on the carrier mobility in heavily doped p-type Si (Articolo in rivista)

Type
Label
  • Effect of strain on the carrier mobility in heavily doped p-type Si (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • Romano, L; Piro, AM; Grimaldi, MG; Bisognin, G; Napolitani, E; De Salvador, D (2006)
    Effect of strain on the carrier mobility in heavily doped p-type Si
    in Physical review letters (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Romano, L; Piro, AM; Grimaldi, MG; Bisognin, G; Napolitani, E; De Salvador, D (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 97 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Catania Univ, CNR, MATIS, I-95123 Catania, Italy; Catania Univ, Dipartimento Fis & Astron, I-95123 Catania, Italy; Univ Padua, CNR, MATIS, I-35131 Padua, Italy; Univ Padua, Dipartimento Fis, I-35131 Padua, Italy (literal)
Titolo
  • Effect of strain on the carrier mobility in heavily doped p-type Si (literal)
Abstract
  • We present an experiment that gives insight into the origin of the dependence of the hole mobility (mu) on the dopant species in heavily doped p-type Si under low electrical field. The Hall carrier concentration and mobility were measured in Si coimplanted with B and Ga in the 0.1-2x10(20) cm(-3) concentration range. The strain induced by substitutional dopants, detected by high resolution x-ray diffraction, was varied by changing the relative B and Ga concentration. The effect of strain on mobility was disentangled and a linear relationship between 1/mu and the perpendicular strain was found. (literal)
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