Large fluorine-vacancy clusters in Si and their capture efficiency for self-interstitials (Articolo in rivista)

Type
Label
  • Large fluorine-vacancy clusters in Si and their capture efficiency for self-interstitials (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • Lopez, GM; Fiorentini, V (2006)
    Large fluorine-vacancy clusters in Si and their capture efficiency for self-interstitials
    in Applied physics letters
    (literal)
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  • Lopez, GM; Fiorentini, V (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 89 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Cagliari, Sardinian Lab Computat Mat Sci, SLACS, INFM,CNR, I-09042 Cagliari, Italy; Univ Cagliari, Dipartimento Fis, I-09042 Cagliari, Italy; Philips Res Leuven, B-3000 Louvain, Belgium (literal)
Titolo
  • Large fluorine-vacancy clusters in Si and their capture efficiency for self-interstitials (literal)
Abstract
  • Based on ab initio density-functional energetics for saturated (n=2m+2) fluorine-vacancy clusters FnVm for m up to 4, the authors set up a model showing that (a) fluorine-vacancy (F-V) aggregates in Si can form in any size and concentration for sufficient concentrations of incorporated (e.g., implanted) F, and (b) the F to V ratio in F-V complexes (i.e., the inverse capture efficiency of self-interstitials) is an ensemble average over many cluster sizes. It ranges between 4 and 2, with typical values of 2.2-2.5, consistent with recent experimental estimates. (c) 2006 American Institute of Physics. (literal)
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