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Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET (Articolo in rivista)

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Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET (Articolo in rivista) (literal)

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Poggi A, Moscatelli F, Solmi S, Nipoti R, Tamarri F, Pizzochero G (2009)
Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET
in Materials science forum; TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH (Svizzera)
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Congresso data SEP 07-11, 2008 Congresso luogo Barcelona, SPAIN Congresso nome 7th European Conference on Silicon Carbide and Related Materials Congresso relazione Contributo Congresso rilevanza Internazionale Curatore/i del volume Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard Titolo del volume SILICON CARBIDE AND RELATED MATERIALS 2008 (literal)

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Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET (literal)

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Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard (literal)

Abstract

The electrical characteristics of MOSFETs fabricated on 4H-SiC with a process based on N implantation in the channel region before the growth of the gate oxide are reported as a Function of the N concentration at the SiO(2)/SiC interface up to 6 x 10(19) cm(-3). The field effect mobility improves with increasing N concentration. At room temperature values change from 4 cm(2)/Vs for the not implanted sample up to 42 cm(2)/Vs for the sample with the highest N concentration. Furthermore, the field effect mobility increases with temperature and presents values above 60 cm(2)/Vs at 200 degrees C. The MOSFETs with the better electrical characteristics (higher mobility, lower threshold voltage, lower Subthreshold swing) were fabricated by a low thermal budget oxidation process, thank to the use of a high N implantation close able to produce all amorphous SiC surface layer. A strong correlation among the increasing of the N concentration at the SiO(2)/SiC interface, the reduction of the interface state density located near the conduction band and the improvement of the MOSFETs performance was obtained. (literal)

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