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C-V and DLTS analyses of trap-induced graded junctions: the case of Al+ implanted JTE p+n 4H-SiC diodes. (Articolo in rivista)

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C-V and DLTS analyses of trap-induced graded junctions: the case of Al+ implanted JTE p+n 4H-SiC diodes. (Articolo in rivista) (literal)

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Fabbri F, Moscatelli F, Poggi A, Nipoti R, Cavallini A (2009)
C-V and DLTS analyses of trap-induced graded junctions: the case of Al+ implanted JTE p+n 4H-SiC diodes.
in Materials science forum; TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH (Svizzera)
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Congresso data SEP 07-11, 2008 Congresso luogo Barcelona, SPAIN Congresso nome 7th European Conference on Silicon Carbide and Related Materials Congresso relazione Contributo Congresso rilevanza Internazionale Curatore/i del volume PerezTomas, A; Godignon, P; Vellvehi, M; Brosselard, P Titolo del volume SILICON CARBIDE AND RELATED MATERIALS 2008 (literal)

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Phos Lab, Università degli Studi di Bologna, viale Berti Pichat 6/2, 40127 Bologna, Italy CNR-IMM of Bologna, via Gobetti 101, 40129 Bologna, Italy (literal)

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C-V and DLTS analyses of trap-induced graded junctions: the case of Al+ implanted JTE p+n 4H-SiC diodes. (literal)

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Abstract

Capacitance versus Voltage (C-V) and Deep Level Transient Spectroscopy (DLTS) measurements of Al+ implanted p+n diodes with Al+ implanted Junction Termination Extension are here studied. These diodes present C-V characteristics like graded junction for low forward bias values, i.e. > 0.4 V , or like abrupt junctions for large reverse bias, i.e. between 0.4V and -10V. The depth range of the graded junction, computed by the capacitance values, is much larger than the simulated tail of the ion implanted Al+ profile. DLTS spectra have been measured both in injection and standard configuration and always show minority carrier traps in the temperature range 0-300K. Three are the minority carrier related peaks, one attributed to the Al acceptor and the others to the D and D1 defects. The depth distribution of these hole traps will be discussed with respect to the apparent carrier concentration, obtained by C-V analysis. (literal)

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