Extended Study of the Step-bunching Mechanism During the Homoepitaxial Growth of SiC (Articolo in rivista)

Type
Label
  • Extended Study of the Step-bunching Mechanism During the Homoepitaxial Growth of SiC (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Alternative label
  • Camarda M, La Magna A, Severino A, La Via F (2008)
    Extended Study of the Step-bunching Mechanism During the Homoepitaxial Growth of SiC
    in Materials science forum
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Camarda M, La Magna A, Severino A, La Via F (literal)
Pagina inizio
  • 117 (literal)
Pagina fine
  • 120 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 615 - 617 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM (literal)
Titolo
  • Extended Study of the Step-bunching Mechanism During the Homoepitaxial Growth of SiC (literal)
Abstract
  • We discuss the possible source of surface instabilities (with specific reference to the step bunching phenomena) during the growth of cubic and hexagonal Silicon Carbide polytypes. For this analysis we use: results from super-lattice Kinetic Monte Carlo simulations, atomic force microscope surface analysis and literature data. We show that only hexagonal polytypes with misorientation cut toward the <11-20> direction suffer \"intrinsically\" the step bunching phenomena (i.e. it are present, independently on the growth conditions) whereas cubic polytypes and hexagonal ones with misorientation cut toward the <10-10> direction do not. ¬© (2009) Trans Tech Publications, Switzerland. (literal)
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