Atomistic and Continuum Simulations of the Homo-epitaxial Growth of SiC (Articolo in rivista)

Type
Label
  • Atomistic and Continuum Simulations of the Homo-epitaxial Growth of SiC (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Alternative label
  • Camarda M, La Magna A, La Via F (2008)
    Atomistic and Continuum Simulations of the Homo-epitaxial Growth of SiC
    in Materials science forum
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Camarda M, La Magna A, La Via F (literal)
Pagina inizio
  • 73 (literal)
Pagina fine
  • 76 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 615 - 617 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM (literal)
Titolo
  • Atomistic and Continuum Simulations of the Homo-epitaxial Growth of SiC (literal)
Abstract
  • Using joined super-lattice Kinetic Monte Carlo simulations, continuous modelling and recent experimental data on the homoepitaxial growth of 4H Silicon Carbide we study the transition between monocrystalline and polycrystalline growth in terms of misorientation cut, growth rate and temperature. We compare these optimally calibrated results both with previous continuous models and literature data. We demonstrate that this study was, indeed, necessary to correctly reformulate the phase diagram of the transition. ¬© (2009) Trans Tech Publications, Switzerland. (literal)
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