Thick Epitaxial Layers Growth by Chlorine Addition (Articolo in rivista)

Type
Label
  • Thick Epitaxial Layers Growth by Chlorine Addition (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Alternative label
  • La Via F, Izzo G, Camarda M, Abbondanza G, Crippa D (2008)
    Thick Epitaxial Layers Growth by Chlorine Addition
    in Materials science forum
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • La Via F, Izzo G, Camarda M, Abbondanza G, Crippa D (literal)
Pagina inizio
  • 55 (literal)
Pagina fine
  • 60 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 615 - 617 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM, Dipartimento di Fisica Università di Catania, ETC, LPE (literal)
Titolo
  • Thick Epitaxial Layers Growth by Chlorine Addition (literal)
Abstract
  • The growth rate of 4H-SiC epi layers has been increased up to 100 OEºm/h by chlorine addition. The epitaxial layers grown with this process have been characterized by electrical, optical and structural characterization methods. Very thick (> 100 OEºm) epitaxial layer has been grown and the Schottky diodes realized on these layers have good yield (> 87%) with a low defect density (10/cm2). This process gives the opportunity to realize very high power devices with breakdown voltages in the range of 10 kV or X-Ray and particle detectors with a low cost epitaxy process. ¬© (2009) Trans Tech Publications, Switzerland. (literal)
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