Thermo-opto-electrical analysis of an optical modulator integrated in a silicon planar structure (Contributo in atti di convegno)

Type
Label
  • Thermo-opto-electrical analysis of an optical modulator integrated in a silicon planar structure (Contributo in atti di convegno) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Alternative label
  • Zaccuri RC, Coppola G, Iodice M, Sciuto A, Libertino S (2005)
    Thermo-opto-electrical analysis of an optical modulator integrated in a silicon planar structure
    in Conference on Optoelectronic Devices: Physics, Fabrication, and Application II
    (literal)
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  • Zaccuri RC, Coppola G, Iodice M, Sciuto A, Libertino S (literal)
Pagina inizio
  • 60130k (literal)
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  • Optoelectronic Devices: Physics, Fabrication, and Application II (literal)
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  • 6013 (literal)
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  • 6013 (literal)
Rivista
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  • IMM-CNR (literal)
Titolo
  • Thermo-opto-electrical analysis of an optical modulator integrated in a silicon planar structure (literal)
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  • AA.VV. (literal)
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  • J. Piprek (literal)
Abstract
  • We propose numerical analysis of an integrated waveguide-vanishing-based modulator realized by ion implantation in SOI wafer. The active region is 3×3 µm2 and the lateral confinement is guaranteed by two highly-doped As (8×1019cm-3) and B (2×1019cm-3) implanted regions 1-µm-deep. This type of structure allows to obtain a planar device, avoiding structural steps which are harmful for photolithography processes. The resulting channel waveguide shows single mode operation and propagation losses of about 1.8 dB/mm, which are acceptable for short structures. The modulation is based on a lateral p-i-n diode, which injects free carriers into the rib volume between the doped regions. We have optimized the device for maximum injection efficiency for a given applied voltage. The resulting optical behavior can be explained by the lateral confinement vanishing that transforms the rib waveguide in a slab waveguide, once the rib is full of free carriers. This phenomenon occurs at driving voltage of about 1.0 V, with electrical power consumption below 1 mW, and implies a rapid variation of the propagating characteristics, and as consequence an optical beam lateral redistribution into the structure. Results show that an optical modulation depth close to 100% can be reached with a switching time of about 30 ns. (literal)
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