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Size effects on the electrical activation of low-energy implanted B in Si (Contributo in atti di convegno)
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- Size effects on the electrical activation of low-energy implanted B in Si (Contributo in atti di convegno) (literal)
- Anno
- 2005-01-01T00:00:00+01:00 (literal)
- Alternative label
Giannazzo F, Raineri V, Bruno E, Mirabella S, Impellizzeri G, Priolo F, Napolitani E (2005)
Size effects on the electrical activation of low-energy implanted B in Si
in 8th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors, Daytona Beach, FL, JUN 05-08, 2005
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Giannazzo F, Raineri V, Bruno E, Mirabella S, Impellizzeri G, Priolo F, Napolitani E (literal)
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- IMM-CNR Catania
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- Titolo
- Size effects on the electrical activation of low-energy implanted B in Si (literal)
- Abstract
- he phenomena related to the electrical activation of low energy implanted B (3 keV,2 X 10(14) B/cm(2)) in laterally submicron confined Si regions were studied by high resolution quantitative scanning capacitance microscopy (SCM). The B diffusion and its precipitation into electrically inactive B-Si interstitial clusters (BICs) were studied by varying the implant window size from 3.2 to 0.38 mu m and annealing at 800 degrees C from 12 to 200 min in N-2 ambient. In particular, the electrically active B fraction is followed by calculating the carrier concentration profile from SCM data with increasing the annealing time. Both the B reactivation and diffusion exhibit a strong dependence on the window width. The higher electrically active B fraction is always found in the narrowest window, which also first recovers the almost complete electrical activation. The B diffusivity enhancement for the 3.2 mu m window size is more than one order of magnitude higher than for the 0.38 mu m window. (literal)
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