Size effects on the electrical activation of low-energy implanted B in Si (Contributo in atti di convegno)

Type
Label
  • Size effects on the electrical activation of low-energy implanted B in Si (Contributo in atti di convegno) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Alternative label
  • Giannazzo F, Raineri V, Bruno E, Mirabella S, Impellizzeri G, Priolo F, Napolitani E (2005)
    Size effects on the electrical activation of low-energy implanted B in Si
    in 8th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors, Daytona Beach, FL, JUN 05-08, 2005
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Giannazzo F, Raineri V, Bruno E, Mirabella S, Impellizzeri G, Priolo F, Napolitani E (literal)
Pagina inizio
  • 293 (literal)
Pagina fine
  • 299 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMM-CNR Catania MATIS-INFM-CNR Catania (literal)
Titolo
  • Size effects on the electrical activation of low-energy implanted B in Si (literal)
Abstract
  • he phenomena related to the electrical activation of low energy implanted B (3 keV,2 X 10(14) B/cm(2)) in laterally submicron confined Si regions were studied by high resolution quantitative scanning capacitance microscopy (SCM). The B diffusion and its precipitation into electrically inactive B-Si interstitial clusters (BICs) were studied by varying the implant window size from 3.2 to 0.38 mu m and annealing at 800 degrees C from 12 to 200 min in N-2 ambient. In particular, the electrically active B fraction is followed by calculating the carrier concentration profile from SCM data with increasing the annealing time. Both the B reactivation and diffusion exhibit a strong dependence on the window width. The higher electrically active B fraction is always found in the narrowest window, which also first recovers the almost complete electrical activation. The B diffusivity enhancement for the 3.2 mu m window size is more than one order of magnitude higher than for the 0.38 mu m window. (literal)
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