Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and Wet O2 oxidation ambient (Articolo in rivista)

Type
Label
  • Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and Wet O2 oxidation ambient (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • Poggi A, Moscatelli F, Scorzoni A, Marino G, Nipoti R, Sanmartin M (2006)
    Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and Wet O2 oxidation ambient
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Poggi A, Moscatelli F, Scorzoni A, Marino G, Nipoti R, Sanmartin M (literal)
Pagina inizio
  • 979 (literal)
Pagina fine
  • 982 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 527 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR- IMM Sezione di Bologna, via Gobetti 101, 40129 Bologna, Italy DIEI and INFN, University of Perugia, via G. Duranti 93, 06125 Perugia, Italy (literal)
Titolo
  • Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and Wet O2 oxidation ambient (literal)
Abstract
  • Many investigations have been conducted on the growth conditions of SiO2 on SiC to improve the oxide quality and the properties of the silicon carbide-silicon dioxide interface. In this work a comparison between a wet oxidation and an oxidation in N2O ambient diluted in N2 is proposed. The interface state density Dit near the conduction-band edge of SiC has been evaluated by conventional C-V measurements obtaining results similar or better than the literature data. Furthermore, the slow trapping phenomena have been studied and preliminary results are reported. (literal)
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