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Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose (Articolo in rivista)
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- Label
- Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose (Articolo in rivista) (literal)
- Anno
- 2007-01-01T00:00:00+01:00 (literal)
- Alternative label
Poggi A, Moscatelli F, Hijikata Y, Solmi S, Sanmartin M, Tamarri F, Nipoti R (2007)
Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose
in Materials science forum
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- Poggi A, Moscatelli F, Hijikata Y, Solmi S, Sanmartin M, Tamarri F, Nipoti R (literal)
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- CNR-IMM sezione di Bologna Via P. Gobetti 101, 40129 Bologna, Italy
Division of Mathematics, Electronics and Information, Saitama University 255 Shimo-Okubo,Sakura-ku, Saitama-shi, Saitama 338-8570, Japan (literal)
- Titolo
- Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose (literal)
- Abstract
- Aiming to minimize the interface state density, we fabricated MOS capacitors on n-type
4H-SiC by using wet oxidation of nitrogen implanted layers. We investigated a wide range of
implantation dose, including a high dose able to amorphise a surface SiC layer with the intent to
reduce the oxidation time. The oxide quality and the SiO2-SiC interface properties were
characterized by capacitance-voltage measurements of the MOS capacitors. The proposed process,
in which nitrogen is ion-implanted on SiC layer before a wet oxidation, is effective to reduce the
density of interface states near the conduction band edge if a high concentration of nitrogen is
introduced at the SiO2-SiC interface. We found that only the nitrogen implanted at the oxide-SiC
interface reduces the interface states and we did not observe the generation of fixed positive charges
in the oxide as a consequence of nitrogen implantation. Furthermore, the concentration of the slow
traps evaluated from the Slow Trap Profiling technique was low and did not depend on the nitrogen
implantation fluence. (literal)
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