Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose (Articolo in rivista)

Type
Label
  • Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Poggi A, Moscatelli F, Hijikata Y, Solmi S, Sanmartin M, Tamarri F, Nipoti R (2007)
    Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose
    in Materials science forum
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Poggi A, Moscatelli F, Hijikata Y, Solmi S, Sanmartin M, Tamarri F, Nipoti R (literal)
Pagina inizio
  • 639 (literal)
Pagina fine
  • 642 (literal)
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  • 556 (literal)
Rivista
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  • 4 (literal)
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  • CNR-IMM sezione di Bologna Via P. Gobetti 101, 40129 Bologna, Italy Division of Mathematics, Electronics and Information, Saitama University 255 Shimo-Okubo,Sakura-ku, Saitama-shi, Saitama 338-8570, Japan (literal)
Titolo
  • Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose (literal)
Abstract
  • Aiming to minimize the interface state density, we fabricated MOS capacitors on n-type 4H-SiC by using wet oxidation of nitrogen implanted layers. We investigated a wide range of implantation dose, including a high dose able to amorphise a surface SiC layer with the intent to reduce the oxidation time. The oxide quality and the SiO2-SiC interface properties were characterized by capacitance-voltage measurements of the MOS capacitors. The proposed process, in which nitrogen is ion-implanted on SiC layer before a wet oxidation, is effective to reduce the density of interface states near the conduction band edge if a high concentration of nitrogen is introduced at the SiO2-SiC interface. We found that only the nitrogen implanted at the oxide-SiC interface reduces the interface states and we did not observe the generation of fixed positive charges in the oxide as a consequence of nitrogen implantation. Furthermore, the concentration of the slow traps evaluated from the Slow Trap Profiling technique was low and did not depend on the nitrogen implantation fluence. (literal)
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