Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route (Articolo in rivista)

Type
Label
  • Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Masi M, Veneroni A, Fiorucci A, La Via F, Foti G, Mauceri M, Leone S, Pistone G, Condorelli G, Abbondanza G, Valente GL and Crippa D (2007)
    Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Masi M, Veneroni A, Fiorucci A, La Via F, Foti G, Mauceri M, Leone S, Pistone G, Condorelli G, Abbondanza G, Valente GL and Crippa D (literal)
Pagina inizio
  • 93 (literal)
Pagina fine
  • 96 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 556-5 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Dept. Chimica, Materiali e Ingegneria Chimica “G. Natta”, Politecnico di Milano, Milano, Italy. CNR-IMM sezione di Catania, Stradale Primosole 50, 95121 Catania, Italy Physics Department, Catania University, Via S. Sofia 64, 95123 Catania, Italy Epitaxial Technology Center, c/o BIC Sicilia –. Pantano d’Arci, 95030 Catania, Italy. LPE Epitaxial Technology,Via Falzarego 8, 20021 Bollate (Mi), Italy. (literal)
Titolo
  • Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route (literal)
Abstract
  • A simplified deposition model, involving both the description of the deposition and of the film morphology was adopted to quantitatively understand the experimental trends encountered in the epitaxial silicon carbide deposition in an industrial hot wall reactor. The attention was focused on the system involving chlorinated species because its really superior performances with respect the traditional silane/hydrocarbons process. The evolution of the crystalline structure (i.e., from poly to single) and of the surface roughness can be understood by simply comparing two characteristic times, like those inherent the surface diffusion and the matter supply to the surface. (literal)
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