Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization (Articolo in rivista)

Type
Label
  • Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Calcagno L, Izzo G, Litrico G, Galvagno G, Firrincieli A, Di Franco S, Mauceri M, Leone S, Pistone G, Condorelli G, Portuese F, Abbondanza G, Foti G and La Via F (2007)
    Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Calcagno L, Izzo G, Litrico G, Galvagno G, Firrincieli A, Di Franco S, Mauceri M, Leone S, Pistone G, Condorelli G, Portuese F, Abbondanza G, Foti G and La Via F (literal)
Pagina inizio
  • 137 (literal)
Pagina fine
  • 140 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 556-5 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM sezione di Catania, Stradale Primosole 50, 95121 Catania, Italy Physics Department, Catania University, Via S. Sofia 64, 95123 Catania, Italy Epitaxial Technology Center, c/o BIC Sicilia – Pantano d’Arci, 95030 Catania, Italy (literal)
Titolo
  • Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization (literal)
Abstract
  • High growth rate of 4H-SiC epitaxial layers can be reached with the introduction of HCl in the deposition chamber. The effect of the Cl/Si ratio on this epitaxial growth process has been studied by optical and electrical measurements. Optical microscopy shows an improvement of the surface morphology and luminescence measurements reveal a decrease of epitaxial layer defects with increasing the Cl/Si ratio in the range 0.05–2.0. The leakage current measured on the diodes realized on these wafers is reduced of an order of magnitude and DLTS measurements show a decrease of the EH6,7 level concentration in the same range of Cl/Si ratio. The value Cl/Si=2.0 allows to grow epitaxial layers with the lowest defect concentration. (literal)
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