Very High Growth Rate Epitaxy Processes with Chlorine Addition (Articolo in rivista)

Type
Label
  • Very High Growth Rate Epitaxy Processes with Chlorine Addition (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • La Via F, Leone S, Mauceri M, Pistone G, Condorelli G, Abbondanza G, Portuese F, G. Galvagno, Di Franco S, Calcagno L, Foti G, Valente GL and Crippa D (2007)
    Very High Growth Rate Epitaxy Processes with Chlorine Addition
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • La Via F, Leone S, Mauceri M, Pistone G, Condorelli G, Abbondanza G, Portuese F, G. Galvagno, Di Franco S, Calcagno L, Foti G, Valente GL and Crippa D (literal)
Pagina inizio
  • 157 (literal)
Pagina fine
  • 160 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 556-5 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM sezione di Catania, Stradale Primosole 50, 95121 Catania, Italy Epitaxial Technology Center, c/o BIC Sicilia – Pantano d’Arci, 95030 Catania, Italy Physics Department, Catania University, Via S. Sofia 64, 95123 Catania, Italy LPE,Via Falzarego 8, 20021 Bollate (Mi), Italy (literal)
Titolo
  • Very High Growth Rate Epitaxy Processes with Chlorine Addition (literal)
Abstract
  • The growth rate of 4H-SiC epi layers has been increased by a factor 19 (up to 112 µm/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been characterized by electrical, optical and structural characterization methods. An optimized process without the addition of HCl is reported for comparison. The Schottky diodes, manufactured on the epitaxial layer grown with the addition of HCl at 1600 °C, have electrical characteristics comparable with the standard epitaxial process with the advantage of an epitaxial growth rate three times higher. (literal)
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