Carbonization Study of Different Silicon Orientations (Articolo in rivista)

Type
Label
  • Carbonization Study of Different Silicon Orientations (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Severino A, Bongiorno C, Leone S, Mauceri M, Pistone G, Condorelli G, Abbondanza G, Portuese F, Foti G, and La Via F (2007)
    Carbonization Study of Different Silicon Orientations
    (literal)
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  • Severino A, Bongiorno C, Leone S, Mauceri M, Pistone G, Condorelli G, Abbondanza G, Portuese F, Foti G, and La Via F (literal)
Pagina inizio
  • 171 (literal)
Pagina fine
  • 174 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 556-5 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM sezione di Catania, Stradale Primosole 50, 95121 Catania, Italy Physics Department, Catania University, Via S. Sofia 64, 95123 Catania, Italy Epitaxial Technology Center, c/o BIC Sicilia – Pantano d’Arci, 95030 Catania, Italy (literal)
Titolo
  • Carbonization Study of Different Silicon Orientations (literal)
Abstract
  • 3C-SiC/Si heteroepitaxy is hampered by large mismatches in lattice parameters (19.7%) and thermal expansion coefficient (8%) leading to 3C-SiC films containing high defects density. To reduce the presence of defects, a multi-step growth process in a CVD reactor is used. The aim of the work is to study the effect of carbonization on differently oriented Si surfaces, experiencing a 200°C-wide temperature range in a CVD reactor, to improve the crystalline quality. TEM analysis are carried out to evaluate thickness, crystal orientations and defects of carbonized layers with respect to the time-dependence of the process and to the different orientations of the Si substrate. It will be shown that process-related defects are strictly correlated to the substrate orientation either for size, density, occupied area, shape or thickness. Uniform, flat and crystalline thin SiC films are obtained with a low defect density. (literal)
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