Growth of InN on 6H-SiC by plasma Assisted Molecular Beam Epitaxy (Articolo in rivista)

Type
Label
  • Growth of InN on 6H-SiC by plasma Assisted Molecular Beam Epitaxy (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1002/pssc.200565150 (literal)
Alternative label
  • A.S. Brown, T-H Kim, S. Choi1, P. Wu, M. Morse, M. Losurdo, M.M. Giangregorio, G. Bruno, A. Moto (2006)
    Growth of InN on 6H-SiC by plasma Assisted Molecular Beam Epitaxy
    in Physica status solidi. C, Conferences and critical reviews
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • A.S. Brown, T-H Kim, S. Choi1, P. Wu, M. Morse, M. Losurdo, M.M. Giangregorio, G. Bruno, A. Moto (literal)
Pagina inizio
  • 1531 (literal)
Pagina fine
  • 1536 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 6 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Duke Univ, Dept Elect & Comp Engn, Durham, NC 27706 USA CNR-IMIP (literal)
Titolo
  • Growth of InN on 6H-SiC by plasma Assisted Molecular Beam Epitaxy (literal)
Abstract
  • We have investigated the growth of InN films by plasma assisted molecular beam epitaxy on the Si-face of 6H-SiC(0001). Growth is performed under In-rich conditions using a two-step process consisting of the deposition of a thin, low-temperature 350 degrees C InN buffer layer, followed by the subsequent deposition of the InN epitaxial layer at 450 degrees C. The effect of buffer annealing is investigated. The structural and optical evolution of the growing layer has been monitored in real time using RHEED and spectroscopic ellipsometry. Structural, morphological, electrical and optic properties are discussed. (literal)
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