Real Time Spectroscopic Ellipsometry Investigation of Homoepitaxial GaN Grown by Plasma Assisted Molecular Beam Epitaxy (Articolo in rivista)

Type
Label
  • Real Time Spectroscopic Ellipsometry Investigation of Homoepitaxial GaN Grown by Plasma Assisted Molecular Beam Epitaxy (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1002/pssc.200565207 (literal)
Alternative label
  • T-H Kim, S. Choi1, P. Wu, A. Brown,M. Losurdo, M.M. Giangregorio, G. Bruno, A. Moto, (2006)
    Real Time Spectroscopic Ellipsometry Investigation of Homoepitaxial GaN Grown by Plasma Assisted Molecular Beam Epitaxy
    in Physica status solidi. C, Conferences and critical reviews
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • T-H Kim, S. Choi1, P. Wu, A. Brown,M. Losurdo, M.M. Giangregorio, G. Bruno, A. Moto, (literal)
Pagina inizio
  • 1583 (literal)
Pagina fine
  • 1586 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 6 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Duke Univ, Dept Elect & Comp Engn, 128 Hudson Hall, Durham, NC 27706 USA. CNR-IMIP (literal)
Titolo
  • Real Time Spectroscopic Ellipsometry Investigation of Homoepitaxial GaN Grown by Plasma Assisted Molecular Beam Epitaxy (literal)
Abstract
  • The growth of GaN by plasma assisted molecular beam epitaxy on GaN template substrates (GaN on sapphire) is investigated with in-situ multi-channel spectroscopic ellipsometry. Growth is performed under various Ga/N flux ratios at growth temperatures in the range 710-780 degrees C. The thermal roughening of the GaN template caused by decomposition of the surface is investigated through the termporal variation of the GaN pseudodielectric function over the temperature range of 650 T to 850 T. The structural, morphological, and optical properties are also discussed. (literal)
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