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Chemically prepared well-ordered InP(001) surfaces (Articolo in rivista)

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Chemically prepared well-ordered InP(001) surfaces (Articolo in rivista) (literal)

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Tereshchenko, OE; Paget, D; Chiaradia, P; Placidi, E; Bonnet, JE; Wiame, F; Taleb-Ibrahimi, A (2006)
Chemically prepared well-ordered InP(001) surfaces
in Surface science
(literal)

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Tereshchenko, OE; Paget, D; Chiaradia, P; Placidi, E; Bonnet, JE; Wiame, F; Taleb-Ibrahimi, A (literal)

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Novosibirsk State Univ, Inst Semicond Phys, Novosibirsk 630090, Russia; Ecole Polytech, Phys Mat Condensee Lab, F-91128 Palaiseau, France; Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy; Univ Roma Tor Vergata, CNISM, I-00133 Rome, Italy; CNR, Ist Nazl Fis Mat, I-00133 Rome, Italy; Univ Paris 11, LURE, F-91405 Orsay, France; Ecole Natl Super Chim Paris, Lab Phys Chim Surface, F-75231 Paris 05, France (literal)

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Abstract

In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by means of low-energy electron diffraction (LEED), soft X-ray photoemission (SXPS), and reflectance anisotropy (RAS) spectroscopies. The treatment removes the natural oxide and leaves on the surface a physisorbed overlayer containing InClx and phosphorus. Annealing at 230 C induces desorption of InClx overlayer and reveals a P-rich (2 x 1) surface. Subsequent annealing at higher temperature induces In-rich (2 x 4) surface. The structural properties of chemically prepared InP(001) surfaces were found to be similar to those obtained by decapping of As/P-capped epitaxial layers. (c) 2006 Elsevier B.V. All rights reserved. (literal)

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