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Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation (Articolo in rivista)
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- Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation (Articolo in rivista) (literal)
- Anno
- 2006-01-01T00:00:00+01:00 (literal)
- Alternative label
De Salvador, D; Bisognin, G; Di Marino, M; Napolitani, E; Carnera, A; Graoui, H; Foad, MA; Boscherini, F; Mirabella, S (2006)
Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation
in Applied physics letters; American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
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- De Salvador, D; Bisognin, G; Di Marino, M; Napolitani, E; Carnera, A; Graoui, H; Foad, MA; Boscherini, F; Mirabella, S (literal)
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- Univ Padua, MATIS INFM CNR, I-35131 Padua, Italy; Univ Padua, Dept Phys, I-35131 Padua, Italy; Appl Mat Inc, Sunnyvale, CA 94086 USA; Univ Bologna, CNISM, I-40127 Bologna, Italy; Univ Bologna, Dept Phys, I-40127 Bologna, Italy; Univ Catania, MATIS INFM CNR, I-95123 Catania, Italy; Univ Catania, Dept Phys & Astron, I-95123 Catania, Italy (literal)
- Titolo
- Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation (literal)
- Abstract
- The authors have investigated ultrashallow p(+)/n-junction formation by solid-phase epitaxy, by using x-ray absorption near-edge spectroscopy measurements on the B K edge. A clear fingerprint of B-B clusters is detected in the spectra. The authors demonstrate that B clustering occurs during the very early stages of annealing-induced Si recrystallization, i.e., when B is still in an amorphous matrix. After complete regrowth the local structure around B remains the same as in the amorphous phase, implying that B clusters are transferred to the crystalline structure. (c) 2006 American Institute of Physics. (literal)
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