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Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires (Articolo in rivista)

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Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires (Articolo in rivista) (literal)

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Kriegner D., C. Panse, B. Mandl, K.A. Dick, M. Keplinger, J.M. Persson, P. Caroff, D. Ercolani, L. Sorba, F. Bechstedt, J. Stangl anc G. Bauer (2011)
Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires
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(literal)

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Kriegner D., C. Panse, B. Mandl, K.A. Dick, M. Keplinger, J.M. Persson, P. Caroff, D. Ercolani, L. Sorba, F. Bechstedt, J. Stangl anc G. Bauer (literal)

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DOI: 10.1021/nl1041512 Acknowledgment: The authors thank the staff at BW2 Hasylab (D. Novikov) for assistance with the beamline setup and E. Vorhauer and F. Binder for technical assistance with the laboratory setups. We acknowledge the financial support from FWF Vienna (SFB025 IR-ON) and the EC (AMON-Ra, 214814, ELISA, 226716 and ETSF, 211956). Part of this work was supported by the Nanometer Structure Consortium at Lund University (nmC@LU), the Swedish Foundation for Strategic Research (SSF), the Swedish Research Council (VR), and the Knut and Alice Wallenberg Foundation. We gratefully acknowledge the use of the TEM facilities at the Center for Electron Nanoscopy at the Technical University of Denmark. (literal)

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1. Johannes Kepler Univ Linz, Inst Solid State Phys & Semicond, A-4040 Linz, Austria (D. Kriegner, B. Mandl, M. Keplinger, J. Stangl, G. Bauer) 2. Univ Jena, Inst Festkorpertheorie & Opt, D-07743 Jena, Germany (C. Panse, F. Bechstedt) 3. Lund Univ, S-22100 Lund, Sweden (B.Mandl, K.A. Dick, P. Caroff) 4. Tech Univ Denmark, Ctr Electron Nanoscopy, DK-2800 Lyngby, Denmark (J.M. Persson) 5. CNRS, IEMN, UMR 8520, F-59652 Villeneuve Dascq, France (P. Caroff) 6. CNR, Ist Nanosci, NEST, I-56127 Pisa, Italy (D. Ercolani, L. Sorba) 7. Scuola Normale Super Pisa, I-56127 Pisa, Italy (D. Ercolani, L. Sorba) (literal)

Titolo

Abstract

The atomic distances in hexagonal polytypes of III-V compound semiconductors differ from the values expected from simply a change of the stacking sequence of (111) lattice planes. While these changes were difficult to quantify so far, we accurately determine the lattice parameters of zinc blende, wurtzite, and 4H polytypes for InAs and InSb nanowires, using X-ray diffraction and transmission electron microscopy. The results are compared to density functional theory calculations. Experiment and theory show that the occurrence of hexagonal bilayers tend to strech the distances of atomic layers parallel to the c-axis and to reduce the in-plane distances compared to those in zinc blende. The change of the lattice parameters scales linearly with the hexagonality of the polytype, defined as the fraction of bilayers with hexagonal character within one unit cell. Document Type: Article (literal)

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