Organic light emitting field effect transistors based on an ambipolar p-i-n layered structure (Articolo in rivista)

Type
Label
  • Organic light emitting field effect transistors based on an ambipolar p-i-n layered structure (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Alternative label
  • Maiorano, V., Bramanti, A., Carallo, S., Cingolani, R., and Gigli, G. (2010)
    Organic light emitting field effect transistors based on an ambipolar p-i-n layered structure
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Maiorano, V., Bramanti, A., Carallo, S., Cingolani, R., and Gigli, G. (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. CNR, Nanosci Inst, NNL, I-73100 Lecce, Italy 2. STMicroelectronics Srl, Distretto Tecnol, ISUFI, I-73100 Lecce, Italy 3. Italian Inst Technol, I-16163 Genoa, Italy 4. Univ Salento, Dept Engn Innovat, I-73100 Lecce, Italy (literal)
Titolo
  • Organic light emitting field effect transistors based on an ambipolar p-i-n layered structure (literal)
Abstract
  • A bottom contact/top gate ambipolar \"p-i-n\" layered light emitting field effect transistor with the active medium inserted between two doped transport layers, is reported. The doping profile results crucial to the capability of emitting light, as well as to the electrical characteristics of the device. In this sense, high output current at relative low applied gate/drain voltage and light emission along the whole large area transistor channel are observed, putting the basis to full integration of organic light emitting field effect transistors in planar complex devices. (literal)
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