Influence of device geometry in the electrical behavior of all organic ambipolar field effect transistors (Articolo in rivista)

Type
Label
  • Influence of device geometry in the electrical behavior of all organic ambipolar field effect transistors (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3515297 (literal)
Alternative label
  • Cosseddu P. and A. Bonfiglio (2010)
    Influence of device geometry in the electrical behavior of all organic ambipolar field effect transistors
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Cosseddu P. and A. Bonfiglio (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. Univ Cagliari, Dept Elect & Elect Engn, I-09123 Cagliari, Italy 2. CNR INFM, I-41100 Modena, Italy (literal)
Titolo
  • Influence of device geometry in the electrical behavior of all organic ambipolar field effect transistors (literal)
Abstract
  • Microcontact printing has been used for realizing all organic, highly flexible, ambipolar field effect transistors based on a pentacene-C60 heterojunction. The contacts were patterned using poly(ethylenedioxythiophene):poly(styrenesulfonate) as conductive polymer. We have compared three different device architectures, bottom contact, top contact, and middle contact, and demonstrated in the last case that a perfect balance between n-and p-type mobilities may be obtained, being source ad drain directly interfaced with both semiconductors. This led to a significant improvement of the electrical performances, which, in turn, allowed the realization of all organic complementary inverters. (literal)
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