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Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice (Articolo in rivista)
- Type
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- Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice (Articolo in rivista) (literal)
- Anno
- 2010-01-01T00:00:00+01:00 (literal)
- Alternative label
De Simoni G., Singha A., Gibertini M., Karmakar B., Polini M., Piazza V., Pfeiffer L.N., West K.W., Beltram F. and Pellegrini V. (2010)
Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice
in Applied physics letters
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- De Simoni G., Singha A., Gibertini M., Karmakar B., Polini M., Piazza V., Pfeiffer L.N., West K.W., Beltram F. and Pellegrini V. (literal)
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- Issue: 13 Article Number: 132113
Acknowledgement:
This work was partially supported by project MIUR-FIRBS RBIN06JB4C_002. We thank A. Pinczuk and K. Vyborny for useful discussions.
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- Note
- ISI Web of Science (WOS) (literal)
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- 1. CNR, Ist Nanosci, Scuola Normale Super Pisa, NEST, I-56127 Pisa, Italy (De Simoni G., Singha A., Gibertini M., Karmakar B., Polini M., Piazza V., Beltram F., Pellegrini V.)
2. Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA (Pfeiffer L.N., West K.W.)
3. Bose Inst, Dept Phys, Calcutta 700009, India (Singha A.) (literal)
- Titolo
- Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice (literal)
- Abstract
- We report the magnetotransport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magnetoresistance and a delocalized-localized transition are shown by applying a gate voltage. We argue that electrons in such artificial-graphene lattices offer a promising approach for the simulation of quantum phases dictated by Coulomb interactions. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3493189] (literal)
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