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Composition uniformity of site-controlled InAs/GaAs quantum dots (Articolo in rivista)

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Composition uniformity of site-controlled InAs/GaAs quantum dots (Articolo in rivista) (literal)

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Biasiol G. a, V. Baranwal a, S. Heun b, M. Prasciolu a, M. Tormen a, A. Locatelli c, T.O. Mentes c, M.A. Niño c, and L. Sorba b (2011)
Composition uniformity of site-controlled InAs/GaAs quantum dots
in Journal of crystal growth
(literal)

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Biasiol G. a, V. Baranwal a, S. Heun b, M. Prasciolu a, M. Tormen a, A. Locatelli c, T.O. Mentes c, M.A. Niño c, and L. Sorba b (literal)

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a Istituto Officina dei Materiali CNR, Laboratorio TASC, I-34149 Trieste, Italy b NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, I-56127 Pisa, Italy c Sincrotrone Trieste S.C.p.A., I-34012 Trieste, Italy (literal)

Titolo

Abstract

We have studied the composition profiles of StranskiKrastanov InAs/GaAs quantum dots grown on patterned nanohole arrays. Two dimensional surface chemical maps obtained by X-ray photoemission electron microscopy reveal a non-uniform composition profile similar to that of standard dots grown on planar surfaces, with an enhanced In concentration at the center of the islands, with respect to the wetting layer. A statistical analysis, however, revealed an improvement of about 50% of dot composition uniformity associated with the already reported enhancement of size uniformity. No significant size or composition variation was found by changing the period of the hole pattern from 250 to 600 nm. (literal)

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