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Surface and bulk electronic structures of LaFeAsO studied by angle-resolved photoemission spectroscopy (Articolo in rivista)

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Surface and bulk electronic structures of LaFeAsO studied by angle-resolved photoemission spectroscopy (Articolo in rivista) (literal)

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Yang, L. X.; Xie, B. P.; Zhang, Y.; He, C.; Ge, Q. Q.; Wang, X. F.; Chen, X. H.; Arita, M.; Jiang, J.; Shimada, K.; Taniguchi, M.; Vobornik, I.; Rossi, G.; Hu, J. P.; Lu, D. H.; Shen, Z. X.; Lu, Z. Y.; Feng, D. L. (2010)
Surface and bulk electronic structures of LaFeAsO studied by angle-resolved photoemission spectroscopy
in Physical review. B, Condensed matter and materials physics (Online)
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Yang, L. X.; Xie, B. P.; Zhang, Y.; He, C.; Ge, Q. Q.; Wang, X. F.; Chen, X. H.; Arita, M.; Jiang, J.; Shimada, K.; Taniguchi, M.; Vobornik, I.; Rossi, G.; Hu, J. P.; Lu, D. H.; Shen, Z. X.; Lu, Z. Y.; Feng, D. L. (literal)

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a State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200433, China b Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China c Hiroshima Synchrotron Radiation Center, Graduate School of Science, Hiroshima University, Hiroshima 739-8526, Japan d CNR-INFM, TASC Laboratory, AREA Science Park, Basovizza, 34012 Trieste, Italy e Dipartimento di Fisica, Universita di Modena e Reggio Emilia, Via Campi 213/A, I-41100 Modena, Italy f Department of Physics, Purdue University, West Lafayette, IN 47907, United States g Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025, United States h Department of Physics, Renmin University of China, Beijing 100872, China (literal)

Titolo

Surface and bulk electronic structures of LaFeAsO studied by angle-resolved photoemission spectroscopy (literal)

Abstract

The electronic structure of LaFeAsO, a parent compound of iron-arsenic superconductors, is studied by angle-resolved photoemission spectroscopy. By examining its dependence on photon energy, polarization, and sodium dosing, both the bulk and the surface contributions are identified. We find that a bulk band moves toward high binding energies below the structural transition temperature, and shifts smoothly across the spin-density-wave transition by about 25 meV. Our data suggest that the band reconstruction may play a crucial role in the spin-density-wave and the structural transitions. For the surface states, both the LaO-terminated and FeAs-terminated components are revealed. Certain small band shifts are observed for the FeAs-terminated surface states in the spin-density-wave state, which might be a reflection of the bulk electronic-structure reconstruction. Moreover, sharp quasiparticle peaks quickly rise at low temperatures, indicating drastic reduction in the scattering rate. A kink structure in one of the surface band is shown to be possibly related to the enhanced electron-phonon interactions on the polar surface. © 2010 The American Physical Society. (literal)

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