Enhancement of Ionic Conductivity in Sm-Doped Ceria/Yttria-Stabilized Zirconia Heteroepitaxial Structures (Articolo in rivista)

Type
Label
  • Enhancement of Ionic Conductivity in Sm-Doped Ceria/Yttria-Stabilized Zirconia Heteroepitaxial Structures (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1002/smll.200902348 (literal)
Alternative label
  • Sanna, S; Esposito, V; Tebano, A; Licoccia, S; Traversa, E; Balestrino, G (2010)
    Enhancement of Ionic Conductivity in Sm-Doped Ceria/Yttria-Stabilized Zirconia Heteroepitaxial Structures
    in Small (Weinh., Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Sanna, S; Esposito, V; Tebano, A; Licoccia, S; Traversa, E; Balestrino, G (literal)
Pagina inizio
  • 1863 (literal)
Pagina fine
  • 1867 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 6 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 17 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Dr. S. Sanna , Dr. V. Esposito , Prof. S. Licoccia , Prof. E. Traversa: NAST Center & Department of Chemical Science and Technology - University of Rome Tor Vergata - Via della Ricerca Scientifi ca, 00133 Rome, Italy Dr. A. Tebano , Prof. G. Balestrino: CNR-SPIN & Department of Mechanical Engineering - University of Rome Tor Vergata - Via del Politecnico, 00133 Rome, Italy Prof. E. Traversa: International Research Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS), 1-1 Namiki - Tsukuba, Ibaraki 305-0044, Japan (literal)
Titolo
  • Enhancement of Ionic Conductivity in Sm-Doped Ceria/Yttria-Stabilized Zirconia Heteroepitaxial Structures (literal)
Abstract
  • Recent developments in the fi eld of thin-fi lm growth technologies have allowed control at an atomic level of deposited layers, thus opening new perspectives in the fi eld of engineering of multilayers and heterostructures based on complex oxides. In particular, it is expected that oxide heterostructures, with almost ideal interfaces, may lead to interesting artificial materials with novel properties. (literal)
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