GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1088/0022-3727/43/6/065402 (literal)

Alternative label

• Kamarudin M. Ahmad, Hayne M., Zhuang Q. D., Kolosov O., Nuytten T., Moshchalkov V. V., Dinelli F. (2010)
  GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer
  in Journal of physics. D, Applied physics (Online)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Kamarudin M. Ahmad, Hayne M., Zhuang Q. D., Kolosov O., Nuytten T., Moshchalkov V. V., Dinelli F. (literal)

Pagina inizio

• 65402 (literal)

Pagina fine

• 65405 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni

• MOLECULAR-BEAM EPITAXY - ANTIMONY EXCHANGE - SURFACE - ISLANDS (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://iopscience.iop.org/0022-3727/43/6/065402/pdf/0022-3727_43_6_065402.pdf (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 43 (literal)

Rivista

• Journal of physics. D, Applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 6 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England; Katholieke Univ Leuven, INPAC Inst Nanoscale Phys & Chem, Pulsed Fields Grp, B-3001 Louvain, Belgium; CNR Istituto Nazionale di Ottica, I-56124 Pisa, Italy (literal)

Titolo

• GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer (literal)

Abstract

• We compare the characteristics of GaSb quantum dots (QDs) grown by molecular beam epitaxy on GaAs at temperatures from 400 to 490 degrees C. The dot morphology, in terms of size, shape and density, as determined by atomic force microscopy (AFM) on uncapped QDs, was found to be highly sensitive to the growth temperature. Photoluminescence (PL) spectra of capped QDs are also strongly dependent on growth temperature, but for samples with the highest dot density, where the QD luminescence would be expected to be the most intense, it is absent. We attribute this to dissolution of the dots by the capping layer. This explanation is confirmed by AFM of a sample that is thinly capped at 490 degrees C. Deposition of the capping layer at low temperature resolves this problem, resulting in strong QD PL from a sample with a high dot density. (literal)

Prodotto di

• Microscopia Confocale e a Sonda (MD.P03.022.004) (Modulo)

Autore CNR

• FRANCO DINELLI (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• FRANCO DINELLI (Unità di personale interno)

Prodotto

• Microscopia Confocale e a Sonda (MD.P03.022.004) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of physics. D, Applied physics (Rivista)

Insieme di parole chiave di

• Parole chiave di "GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer" (Insieme di parole chiave)