Gate tunable infrared phonon anomalies in bilayer graphene (Articolo in rivista)

Type
Label
  • Gate tunable infrared phonon anomalies in bilayer graphene (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevLett.103.116804 (literal)
Alternative label
  • Kuzmenko A.(1), Benfatto L. (2,3,4), Cappelluti E. (3,4), Crassee I. (1), Van Der Marell D. (1), Blake P. (5), Novoselov K. (5), Geim A. (5) (2009)
    Gate tunable infrared phonon anomalies in bilayer graphene
    in Physical review letters (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Kuzmenko A.(1), Benfatto L. (2,3,4), Cappelluti E. (3,4), Crassee I. (1), Van Der Marell D. (1), Blake P. (5), Novoselov K. (5), Geim A. (5) (literal)
Pagina inizio
  • 116804 (literal)
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  • http://prl.aps.org/abstract/PRL/v103/i11/e116804 (literal)
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  • 103 (literal)
Rivista
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  • fasc. (11). American Physical Society. (literal)
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  • 4 (literal)
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  • 11 (literal)
Note
  • Google Scholar (literal)
  • Scopu (literal)
  • ISI Web of Science (WOS) (literal)
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  • 1) Département de Physique de la Matière Condensée, Université de Genève, CH-1211 Genève 4, Switzerland; 2) Centro Studi e Ricerche “Enrico Fermi,” via Panisperna 89/A, I-00184, Rome, Italy; 3) SMC Research Center, CNR-INFM, and ISC-CNR, via dei Taurini 19, 00185 Roma, Italy; 4) Dipartimento di Fisica, Università “La Sapienza,” Piazzale Aldo Moro 2, 00185 Rome, Italy; 5) Manchester Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester M13 9PL, United Kingdom (literal)
Titolo
  • Gate tunable infrared phonon anomalies in bilayer graphene (literal)
Abstract
  • We observe a giant increase of the infrared intensity and a softening of the in-plane antisymmetric phonon mode Eu (?0.2 eV) in bilayer graphene as a function of the gate-induced doping. The phonon peak has a pronounced Fano-like asymmetry. We suggest that the intensity growth and the softening originate from the coupling of the phonon mode to the narrow electronic transition between parallel bands of the same character, while the asymmetry is due to the interaction with the continuum of transitions between the lowest hole and electron bands. The growth of the peak can be interpreted as a “charged-phonon” effect observed previously in organic chain conductors and doped fullerenes, which can be tuned in graphene with the gate voltage. (literal)
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