http://www.cnr.it/ontology/cnr/individuo/prodotto/ID57249
Memory effects in dielectric and anelastic measurements of PLZT (Articolo in rivista)
- Type
- Label
- Memory effects in dielectric and anelastic measurements of PLZT (Articolo in rivista) (literal)
- Anno
- 2004-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1080/00150190490455052 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- F. Cordero (a); F. Craciun (a); A. Franco (a); C. Galassi (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
- Conference: 10th European Meeting on Ferroelectricity Location: Univ Cambridge, Cambridge, ENGLAND Date: AUG 03-08, 2003 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
- fasc. (1). Taylor & Francis. (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- (a) CNR, Istituto di Acustica \"O.M. Corbino\", Area della Ricerca di Roma-Tor Vergata Via del Fosso del Cavaliere, 100, Roma, Italy, I-00133
(b) CNR-ISTEC, Via Granarolo 64, Faenza, Italy, I-48018 (literal)
- Titolo
- Memory effects in dielectric and anelastic measurements of PLZT (literal)
- Abstract
- Anelastic (110 kHz) and dielectric (200 Hz1 MHz) relaxation measurements on ceramic PLZT 9/65/35 are presented. The anelastic and dielectric measurements are extended between 140 and 560 K, and exhibit the typical features of a relaxor transition slightly above room temperature. The peak in the elastic compliance, however, is about 30 K below the relaxor peak in the dielectric susceptibility, indicating an increasing role of the non-180° polarization dynamics at lower temperature. Both the dielectric and elastic susceptibilities exhibit comparable aging and memory effects. The possible influence on aging and memeory from relatively mobile defects like O vacancies is discussed. (literal)
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