Memory effects in dielectric and anelastic measurements of PLZT (Articolo in rivista)

Type
Label
  • Memory effects in dielectric and anelastic measurements of PLZT (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1080/00150190490455052 (literal)
Alternative label
  • F. Cordero (a); F. Craciun (a); A. Franco (a); C. Galassi (2004)
    Memory effects in dielectric and anelastic measurements of PLZT
    in Ferroelectrics (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • F. Cordero (a); F. Craciun (a); A. Franco (a); C. Galassi (literal)
Pagina inizio
  • 221 (literal)
Pagina fine
  • 226 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • Conference: 10th European Meeting on Ferroelectricity Location: Univ Cambridge, Cambridge, ENGLAND Date: AUG 03-08, 2003 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 302 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • fasc. (1). Taylor & Francis. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 1 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • (a) CNR, Istituto di Acustica \"O.M. Corbino\", Area della Ricerca di Roma-Tor Vergata Via del Fosso del Cavaliere, 100, Roma, Italy, I-00133 (b) CNR-ISTEC, Via Granarolo 64, Faenza, Italy, I-48018 (literal)
Titolo
  • Memory effects in dielectric and anelastic measurements of PLZT (literal)
Abstract
  • Anelastic (1–10 kHz) and dielectric (200 Hz–1 MHz) relaxation measurements on ceramic PLZT 9/65/35 are presented. The anelastic and dielectric measurements are extended between 140 and 560 K, and exhibit the typical features of a relaxor transition slightly above room temperature. The peak in the elastic compliance, however, is about 30 K below the relaxor peak in the dielectric susceptibility, indicating an increasing role of the non-180° polarization dynamics at lower temperature. Both the dielectric and elastic susceptibilities exhibit comparable aging and memory effects. The possible influence on aging and memeory from relatively mobile defects like O vacancies is discussed. (literal)
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