http://www.cnr.it/ontology/cnr/individuo/prodotto/ID57197
Mobility of interstitial oxygen in scandium by anelastic spectroscopy (Articolo in rivista)
- Type
- Label
- Mobility of interstitial oxygen in scandium by anelastic spectroscopy (Articolo in rivista) (literal)
- Anno
- 2004-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.ssc.2003.10.010 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- F. Trequattrini (a); F. Cordero (b); G. Cannelli (c); R. Cantelli (a) (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
- fasc. (4). Elsevier. (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- (a) Dipartimento di Fisica, Università di Roma \"La Sapienza\", P. le A. Moro, 2, I-00185 Roma, and INFM, Italy
(b) CNR, Istituto di Acustica \"O.M. Corbino\", Via Fosso del Cavaliere 100, I-00133 Roma, and INFM, Italy
(c) Dipartimento di Fisica, Università della Calabria, Arcavacata di Rende (CS), I-87036 Cosenza, and INFM, Italy (literal)
- Titolo
- Mobility of interstitial oxygen in scandium by anelastic spectroscopy (literal)
- Abstract
- The high-temperature anelastic spectrum of the solid solution ScO has been investigated on a polycrystalline sample at oxygen concentrations between 0.024 and ?0.9 at.% O, as estimated by residual resistivity and intentional O doping. Two thermally activated relaxation processes appear near 430 and 520 K for a vibration frequency of 3.5 kHz; both peaks are stable with thermal cycling and their intensities increase with the oxygen content, indicating that they are due to O jumps. The process at lower temperature has an intensity that strongly increases with increasing temperature, when measured at higher frequency (42 kHz), indicating that the relaxation occurs between states differing in energy by ?0.3 eV. The peak is describable by a single relaxation time, and is interpreted as due to the stress-induced hopping of single oxygen atoms between the non-equivalent tetrahedral and octahedral interstitial sites. The process at high temperature is tentatively attributed to O pairs. An estimate of the specific resistivity of O atoms has been provided. (literal)
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