Hydrogen trapping by defects in semiconductors studied by anelastic spectroscopy (Articolo in rivista)

Type
Label
  • Hydrogen trapping by defects in semiconductors studied by anelastic spectroscopy (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.msea.2003.08.092 (literal)
Alternative label
  • O. Palumbo (a); R. Cantelli (a); F. Cordero (b) (2004)
    Hydrogen trapping by defects in semiconductors studied by anelastic spectroscopy
    in Materials science & engineering. A, Structural materials: properties, microstructure and processing
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • O. Palumbo (a); R. Cantelli (a); F. Cordero (b) (literal)
Pagina inizio
  • 114 (literal)
Pagina fine
  • 117 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • Conference: 13th International Conference on Internal Friction and Ultrasonic Attentuation in Solids Location: Bilbao, SPAIN Date: JUL 08-12, 2002 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 370 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • fasc. (1-2). Elsevier. 13th International Conference on Internal Friction and Ultrasonic Attenuation in Solids. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 1-2 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • (a) INFM and Università di Roma \"La Sapienza\", Dipartimento di Fisica, P. le A. Moro 2, I-00185 Roma, Italy (b) INFM and Istituto di Acustica \"O.M. Corbino\", CNR, Area della Ricerca di Roma-Tor Vergata, I-00133 Roma, Italy (literal)
Titolo
  • Hydrogen trapping by defects in semiconductors studied by anelastic spectroscopy (literal)
Abstract
  • We review some results obtained by anelastic spectroscopy on H-related defects in III–V semiconductors. Anelastic measurements on InP lead to the formulation of a model explaining the conversion to the semi-insulating (SI) state. Moreover, in GaAs:Zn an extraordinarily fast relaxation rate has been measured and a possible explanation has been suggested. This results are reviewed and discussed in the light of new experiments on InP:Zn, whose spectrum shows a relaxation process similar to the one in GaAs:Zn. (literal)
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