http://www.cnr.it/ontology/cnr/individuo/prodotto/ID57103
Hydrogen trapping by defects in semiconductors studied by anelastic spectroscopy (Articolo in rivista)
- Type
- Label
- Hydrogen trapping by defects in semiconductors studied by anelastic spectroscopy (Articolo in rivista) (literal)
- Anno
- 2004-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.msea.2003.08.092 (literal)
- Alternative label
O. Palumbo (a); R. Cantelli (a); F. Cordero (b) (2004)
Hydrogen trapping by defects in semiconductors studied by anelastic spectroscopy
in Materials science & engineering. A, Structural materials: properties, microstructure and processing
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- O. Palumbo (a); R. Cantelli (a); F. Cordero (b) (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
- Conference: 13th International Conference on Internal Friction and Ultrasonic Attentuation in Solids Location: Bilbao, SPAIN Date: JUL 08-12, 2002 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
- fasc. (1-2). Elsevier.
13th International Conference on Internal Friction and Ultrasonic Attenuation in Solids. (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- (a) INFM and Università di Roma \"La Sapienza\", Dipartimento di Fisica, P. le A. Moro 2, I-00185 Roma, Italy
(b) INFM and Istituto di Acustica \"O.M. Corbino\", CNR, Area della Ricerca di Roma-Tor Vergata, I-00133 Roma, Italy (literal)
- Titolo
- Hydrogen trapping by defects in semiconductors studied by anelastic spectroscopy (literal)
- Abstract
- We review some results obtained by anelastic spectroscopy on H-related defects in IIIV semiconductors. Anelastic measurements on InP lead to the formulation of a model explaining the conversion to the semi-insulating (SI) state. Moreover, in GaAs:Zn an extraordinarily fast relaxation rate has been measured and a possible explanation has been suggested. This results are reviewed and discussed in the light of new experiments on InP:Zn, whose spectrum shows a relaxation process similar to the one in GaAs:Zn. (literal)
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