dc transport properties and resistance fluctuation processes in Sr2 FeMoO6 polycrystalline thin films (Articolo in rivista)

Type
Label
  • dc transport properties and resistance fluctuation processes in Sr2 FeMoO6 polycrystalline thin films (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.73.094447 (literal)
Alternative label
  • Savo B. (1); Barone C. (1); Galdi A. (1); Di Trolio A. (2) (2006)
    dc transport properties and resistance fluctuation processes in Sr2 FeMoO6 polycrystalline thin films
    in Physical review. B, Condensed matter and materials physics (Online)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Savo B. (1); Barone C. (1); Galdi A. (1); Di Trolio A. (2) (literal)
Pagina inizio
  • 094447 (literal)
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  • 73 (literal)
Rivista
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  • American Physical Society (APS). (literal)
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  • 6 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 9 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1) Dipartimento di Fisica “E.R. Caianiello,” Universitá di Salerno, Salerno, Italy and COHERENTIA-INFM Salerno, Italy; 2) Istituto dei Sistemi Complessi (ISC-CNR), Unitá di Montelibretti, 00016 Roma, Italy (literal)
Titolo
  • dc transport properties and resistance fluctuation processes in Sr2 FeMoO6 polycrystalline thin films (literal)
Abstract
  • We performed transport measurements and voltage noise analysis on Sr2FeMoO6 thin films, in zero applied magnetic field as a function of temperature T, down to 10 K. The samples, grown by pulsed laser deposition on SrTiO3 substrates, showed a negative resistivity thermal coefficient and, at T<50 K, the observed temperature dependence of resistivity and the I-V curves were correctly described by the fluctuation-induced tunneling model which assumes the presence of intergranular tunneling of charge carriers. Moreover, the analysis of the low temperature resistance fluctuation processes, pointed out the presence of a voltage noise component independent of the frequency within the whole investigated bandwidth with a spectral density directly proportional to the square of the bias current. We interpreted this unusual behavior as a possible consequence of tunneling intergranular processes. (literal)
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