Point defect engineering in preamorphized silicon enriched with fluorine (Articolo in rivista)

Type
Label
  • Point defect engineering in preamorphized silicon enriched with fluorine (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.nimb.2006.10.022 (literal)
Alternative label
  • Impellizzeri, G; Mirabella, S; Priolo, F; Napolitani, E; Carnera, A (2006)
    Point defect engineering in preamorphized silicon enriched with fluorine
    in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Impellizzeri, G; Mirabella, S; Priolo, F; Napolitani, E; Carnera, A (literal)
Pagina inizio
  • 94 (literal)
Pagina fine
  • 99 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 253 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 6 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, MATIS, INFM, I-95123 Catania, Italy; Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy; CNR, MATIS, INFM, I-35131 Padua, Italy; Univ Padua, Dipartimento Fis, I-35131 Padua, Italy (literal)
Titolo
  • Point defect engineering in preamorphized silicon enriched with fluorine (literal)
Abstract
  • Fluorine is known to have a beneficial role for the B diffusion reduction in preamorphized Si, and is promising for the realization of ultra-shallow junctions. Thus, we studied the F incorporation in Si during the solid phase epitaxy (SPE) process, pointing out the effects of the implanted F energy and fluence and the, role played by the possible presence of dopants. The incorporation of fluorine proceeds by F segregation at the amorphous-crystalline interface, with a kinetics driven by the SPE rate. In fact, the quicker the SPE rate, the higher is the F fluence retained. Moreover, we demonstrated that F incorporated in Si layers does not appreciably affect the Is emission from spatially separated end-of-range (EOR) defects. The modification, induced by the presence of F, of the point defect density (Is and Vs) was also studied by means of B and Sb spike layers, used as local markers for Is and Vs, respectively. We showed that F is not only able to completely suppress the boron transient enhanced diffusion (TED), but can enhance the antimony diffusion. These experimental data demonstrate the ability of F in inducing an Is undersaturation or a Vs supersaturation, ruling out the hypothesis of a chemical bonding between F and the dopants. These results improve the engineering of F-enriched Si, for the realization of ultra-shallow junctions. (c) 2006 Elsevier B.V. All rights reserved. (literal)
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