Reversed bias Pt/nanostructured ZnO Schottky diode with enhanced electric field for hydrogen sensing (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Reversed bias Pt/nanostructured ZnO Schottky diode with enhanced electric field for hydrogen sensing (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.snb.2009.12.028 (literal)

Alternative label

• M. Shafiei (a); J. Yu (a); R. Arsat (a); K. Kalantar-zadeh (a); E. Comini (b); M. Ferroni (b); G. Sberveglieri (b); W. Wlodarski (a) (2010)
  Reversed bias Pt/nanostructured ZnO Schottky diode with enhanced electric field for hydrogen sensing
  in Sensors and actuators. B, Chemical (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• M. Shafiei (a); J. Yu (a); R. Arsat (a); K. Kalantar-zadeh (a); E. Comini (b); M. Ferroni (b); G. Sberveglieri (b); W. Wlodarski (a) (literal)

Pagina inizio

• 507 (literal)

Pagina fine

• 512 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 146 (literal)

Rivista

• Sensors and actuators. B, Chemical (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 2 (literal)

Note

• Scopu (literal)
• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• (a) RMIT University, City Campus, GPO Box 2476V, Melbourne 3001, Victoria, Australia (b) SENSOR INFM-CNR University of Brescia, Via Valotti 9, 25133 Brescia, Italy (literal)

Titolo

• Reversed bias Pt/nanostructured ZnO Schottky diode with enhanced electric field for hydrogen sensing (literal)

Abstract

• In this paper, the effect of electric field enhancement on Pt/nanostructured ZnO Schottky diode based hydrogen sensors under reverse bias condition has been investigated. Current-voltage characteristics of these diodes have been studied at temperatures from 25 to 620oC and their free carrier density con- centration was estimated by exposing the sensors to hydrogen gas. The experimental results show a significantly lower breakdown voltage in reversed bias current-voltage characteristics than the conven- tional Schottky diodes and also greater lateral voltage shift in reverse bias operation than the forward bias. This can be ascribed to the increased localized electric fields emanating from the sharp edges and corners of the nanostructured morphologies. At 620oC, voltage shifts of 114 and 325mV for 0.06% and 1% hydrogen have been recorded from dynamic response under the reverse bias condition. (literal)

Prodotto di

• Institute of Acoustics and Sensors \"Orso Mario Corbino\" (IDASC) (Istituto)
• MD.P05.015.001 Materiali nanostrutturati di ossidi metallici e altri semicondutttori per la sensoristica e applicazioni avanzate (MD.P05.015.002) (Modulo)

Autore CNR

• GIORGIO SBERVEGLIERI (Unità di personale esterno)
• ELISABETTA COMINI (Unità di personale esterno)
• MATTEO FERRONI (Unità di personale esterno)

Incoming links:

Prodotto

• Institute of Acoustics and Sensors \"Orso Mario Corbino\" (IDASC) (Istituto)
• MD.P05.015.001 Materiali nanostrutturati di ossidi metallici e altri semicondutttori per la sensoristica e applicazioni avanzate (MD.P05.015.002) (Modulo)

Autore CNR di

• ELISABETTA COMINI (Unità di personale esterno)
• GIORGIO SBERVEGLIERI (Unità di personale esterno)
• MATTEO FERRONI (Unità di personale esterno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Sensors and actuators. B, Chemical (Rivista)