http://www.cnr.it/ontology/cnr/individuo/prodotto/ID5456
Guided Lamb-Wave Electro-Acoustic Devices on Micromachined AlN/Al Plates (Articolo in rivista)
- Type
- Label
- Guided Lamb-Wave Electro-Acoustic Devices on Micromachined AlN/Al Plates (Articolo in rivista) (literal)
- Anno
- 2010-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1109/tuffc.2010.1530 (literal)
- Alternative label
F. Di Pietrantonio (1); M. Benetti (1); D. Cannatà (1); R. Beccherelli (2); E. Verona (1) (2010)
Guided Lamb-Wave Electro-Acoustic Devices on Micromachined AlN/Al Plates
in IEEE transactions on ultrasonics, ferroelectrics, and frequency control
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- F. Di Pietrantonio (1); M. Benetti (1); D. Cannatà (1); R. Beccherelli (2); E. Verona (1) (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
- Note
- Scopu (literal)
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- (1) Consiglio Nazionale delle Ricerche, Istituto di Acustica O. M. Corbino, Rome, Italy
(2) Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi, Rome, Italy (literal)
- Titolo
- Guided Lamb-Wave Electro-Acoustic Devices on Micromachined AlN/Al Plates (literal)
- Abstract
- An electroacoustic micro-device based on the
propagation of guided acoustic Lamb waves in AlN/Al plate
is described. The AlN thin film is deposited by sputtering
technique, optimized to achieve a high degree of orientation
(rocking curve full-width at half-maximum ? 3.5°) of the c-axis
perpendicular to the plate surface. The AlN plate is micromachined
using anisotropic reactive ion etching (RIE), followed
by isotropic RIE to remove the silicon underlayer. Simulation
results for the dispersion phase velocity curves and the electromechanical
coupling coefficient (K2) are obtained by the matrix
method and by the finite element method and compared with
experimental data. A delay line is implemented on the structure
and tested for the propagation of the first symmetrical
Lamb mode (s0) at the frequency of 1.22 GHz. Measurements
have shown that the structure is suitable for implementation of
arrays of electroacoustic devices on a single chip for application
to both sensing devices and signal processing systems. (literal)
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