http://www.cnr.it/ontology/cnr/individuo/prodotto/ID54450
Morphology and orientation of thin poly(3-hexylthiophene) (P3HT) films on differently silanized silicon oxide (Articolo in rivista)
- Type
- Label
- Morphology and orientation of thin poly(3-hexylthiophene) (P3HT) films on differently silanized silicon oxide (Articolo in rivista) (literal)
- Anno
- 2009-01-01T00:00:00+01:00 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Scavia G.; Porzio W.; Destri S.; Schieroni A.G.; Bertini F. (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
- http://www.e-polymers.org/journal/papers/gscavia_080609.pdf (literal)
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Scavia G., Porzio W., Destri S., Giacometti Schieroni A., Bertini F. ISMAC-CNR (literal)
- Titolo
- Morphology and orientation of thin poly(3-hexylthiophene) (P3HT) films on differently silanized silicon oxide (literal)
- Abstract
- The morphology and structure of the overlying poly(3-hexylthiophene) (P3HT) layer onto differently silanized silicon oxide has been studied by Atomic Force Microscopy (AFM) and X-Ray Diffraction (XRD) techniques. By increasing the silanizer alkyl chain length, the layer morphology evolves from a filament like to globular needle like as a consequence of the different SAM organization, while the P3HT conformation remains edge-on. For each case the effect of the annealing temperature has been studied. For all the cases a particular attention has been paid to the first thin layers close to the interface P3HT/SiOx. The effect of a polar substituent and presence of aromatic ring has been also studied. (literal)
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