Ambipolar field-effect transistor based on alpha,omega-dihexylquarterthiophene and alpha,omega diperfluoroquaterthiophene vertical heterojunction (Articolo in rivista)

Type
Label
  • Ambipolar field-effect transistor based on alpha,omega-dihexylquarterthiophene and alpha,omega diperfluoroquaterthiophene vertical heterojunction (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Alternative label
  • R. Capelli, S. Toffanin, G. Generali, A. Facchetti, M. Muccini (2010)
    Ambipolar field-effect transistor based on alpha,omega-dihexylquarterthiophene and alpha,omega diperfluoroquaterthiophene vertical heterojunction
    in Microelectronics and reliability
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • R. Capelli, S. Toffanin, G. Generali, A. Facchetti, M. Muccini (literal)
Pagina inizio
  • 1861 (literal)
Pagina fine
  • 1865 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 50 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Titolo
  • Ambipolar field-effect transistor based on alpha,omega-dihexylquarterthiophene and alpha,omega diperfluoroquaterthiophene vertical heterojunction (literal)
Prodotto di
Autore CNR

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