Layered Distribution of Charge Carriers in Organic Thin Film Transistors (Articolo in rivista)

Type
Label
  • Layered Distribution of Charge Carriers in Organic Thin Film Transistors (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevLett.104.246602 (literal)
Alternative label
  • A. Shehu, S.D. Quiroga, P. D'Angelo, C. Albonetti, F. Borgatti, M. Murgia, A. Scorzoni, P. Stoliar, F. Biscarini (2010)
    Layered Distribution of Charge Carriers in Organic Thin Film Transistors
    in Physical review letters (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • A. Shehu, S.D. Quiroga, P. D'Angelo, C. Albonetti, F. Borgatti, M. Murgia, A. Scorzoni, P. Stoliar, F. Biscarini (literal)
Pagina inizio
  • 246602 (literal)
Pagina fine
  • 246605 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://prl.aps.org/abstract/PRL/v104/i24/e246602 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 104 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • A. Shehu, S.D. Quiroga, P. D'Angelo, C. Albonetti, F. Borgatti, M. Murgia, A. Scorzoni, P. Stoliar, F. Biscarini Istituto per lo studio dei materiali nanostruttrurati -ISMN Consiglio Nazionale delle Ricerche-CNR via P.Gobetti 101, 40129 Bologna ITALY (literal)
Titolo
  • Layered Distribution of Charge Carriers in Organic Thin Film Transistors (literal)
Abstract
  • Drain-source current in organic thin-film transistors has been monitored in situ and in real time during the deposition of pentacene. The current starts to flow when percolation of the first monolayer (ML) occurs and, depending on the deposition rate, saturates at a coverage in the range 2-7 MLs. The number of active layers contributing to the current and the spatial distribution of charge carriers are modulated by the growth mode. The thickness of the accumulation layer, represented by an effective Debye length, scales as the morphological correlation length. These results show that the effective Debye length is not just a material parameter, but depends on the multiscale morphology. Earlier controversial results can be unified within this framework. (literal)
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