http://www.cnr.it/ontology/cnr/individuo/prodotto/ID53847

Dual-gate Organic Field-Effect Transistrors as Potentiometric Sensors an Aqueous Solution (Articolo in rivista)

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Dual-gate Organic Field-Effect Transistrors as Potentiometric Sensors an Aqueous Solution (Articolo in rivista) (literal)

Anno

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Alternative label

Spijkman, Mark-Jan (1),(2); Brondijk, Jakob J. (1); Geuns Tom C. T. (2); Smits, Edsger C. P. (3); Cramer, Tobias (4); Zerbetto, Francesco (4); Stoliar, Pablo (5); Biscarini, Fabio (5); Blom, Paul W. M. (1),(3); de Leeuw, Dago M.(1),(2)* (2010)
Dual-gate Organic Field-Effect Transistrors as Potentiometric Sensors an Aqueous Solution
in Advanced functional materials (Print); Wiley-VCH Verlag Gmbh, Weinheim (Germania)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Spijkman, Mark-Jan (1),(2); Brondijk, Jakob J. (1); Geuns Tom C. T. (2); Smits, Edsger C. P. (3); Cramer, Tobias (4); Zerbetto, Francesco (4); Stoliar, Pablo (5); Biscarini, Fabio (5); Blom, Paul W. M. (1),(3); de Leeuw, Dago M.(1),(2)* (literal)

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Note

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1. Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands 2. Philips Res Labs, NL-5656 AE Eindhoven, Netherlands 3. Holst Ctr, NL-5656 AE Eindhoven, Netherlands 4. Univ Bologna, Dipartimento Chim G Ciamician, I-40126 Bologna, Italy 5. CNR, Inst Study Nanostruct Mat, I-40129 Bologna, Italy (literal)

Titolo

Dual-gate Organic Field-Effect Transistrors as Potentiometric Sensors an Aqueous Solution (literal)

Abstract

Buried electrodes and protection of the semiconductor with a thing passivation layer are used to yield dual gate organic transducers. The process technology is scaled up to 150 mm wafers. The transducers are potentiometric sensors where the detectors relies on measuring a shift in the threshold voltage caused by changes in the electrochemical potential at the second gate dielectric. Analytes can only be detected within the Debye screeing length. The mechanism is assessed by pH measurements. The threshold voltage shift depends on pH as Delta V(th) = (C(top)/C(bottom)) x 58 mV per pH unit, indicating that the sensitivity can be enhanced with respect to conventional ion-sensitive field-effect transistors (ISFETs) by adjusting the ratio of the top and bottom gate capacitances. Remaining challenges and opportunities are discussed. (literal)

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