Anelastic spectroscopy as a probe for the structure and dynamics of defects in semiconductors (Articolo in rivista)

Type
Label
  • Anelastic spectroscopy as a probe for the structure and dynamics of defects in semiconductors (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/S0921-5107(01)01055-8 (literal)
Alternative label
  • Palumbo O. (a), Cordero F. (b), Cantelli R. (a), Trequattrini F. (a), Molinas B. (c), Guadalupi G.M. (c) (2002)
    Anelastic spectroscopy as a probe for the structure and dynamics of defects in semiconductors
    in Materials science & engineering. B, Solid-state materials for advanced technology
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Palumbo O. (a), Cordero F. (b), Cantelli R. (a), Trequattrini F. (a), Molinas B. (c), Guadalupi G.M. (c) (literal)
Pagina inizio
  • 498 (literal)
Pagina fine
  • 502 (literal)
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  • 91-92 (literal)
Rivista
Note
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • a INFM, Dipartimento di Fisica, Università di Roma 'La Sapienza', P.le A. Moro 2, I-00185 Rome, Italy b INFM, Istituto di Acustica 'O.m. Corbino', CNR, Area Ricerca Roma-Tor Vergata, I-00133 Rome, Italy c Venezia Tecnologie SpA (ENI Group), Via delle Industrie 39, I-30175 P, Marghera VE, Italy (literal)
Titolo
  • Anelastic spectroscopy as a probe for the structure and dynamics of defects in semiconductors (literal)
Abstract
  • The anelastic spectroscopy is a powerful method for studying the dynamics and geometry of defects and excitations carrying a local distortion. The vibrational stress affects the energy levels of the defects, which approach the dynamically perturbed thermal equilibrium, giving rise to dissipation of energy. The analysis of anelastic spectra provides the values of the defect jumping (or transition) rates and of the associated energy barriers. Furthermore, the application of the stress along different crystallographic directions gives indications on the symmetry of the relaxing defects. In this manner, important information on some hydrogenated complexes in semiconductors has been obtained. We report an overview of the more meaningful results in Si and III-V compound semiconductors. (literal)
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