Energy level alignment at Alq3/La0.7Sr0.3MnO3 interface for organic spintronic devices (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Energy level alignment at Alq3/La0.7Sr0.3MnO3 interface for organic spintronic devices (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevB.76.045406 (literal)

Alternative label

• Y. Q. Zhan(1), I. Bergenti(1), L.E. Hueso(1), V. Dediu(1), M. P, de Jong(2), Z. S. Li(3) (2007)
  Energy level alignment at Alq3/La0.7Sr0.3MnO3 interface for organic spintronic devices
  in Physical review. B, Condensed matter and materials physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Y. Q. Zhan(1), I. Bergenti(1), L.E. Hueso(1), V. Dediu(1), M. P, de Jong(2), Z. S. Li(3) (literal)

Pagina inizio

• 45406 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://prb.aps.org/pdf/PRB/v76/i4/e045406 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 76 (literal)

Rivista

• Physical review. B, Condensed matter and materials physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. ISMN CNR, I-40129 Bologna, Italy 2. Linkoping Univ, Dept Phys, IFM, S-58183 Linkoping, Sweden 3. Aarhus Univ, Inst Storage Ring Facil, DK-8000 Aarhus, Denmark (literal)

Titolo

• Energy level alignment at Alq3/La0.7Sr0.3MnO3 interface for organic spintronic devices (literal)

Abstract

• The electronic structure of the interface between tris(8-hydroxyquinolino)-aluminum (Alq(3)) and La(0.7)Sr(0.3)MnO(3) (LSMO) manganite was investigated by means of photoelectron spectroscopy. As demonstrated recently, this interface is characterized by efficient spin injection in organic spintronic devices. We detected a strong interface dipole of about 0.9 eV that shifts down the whole energy diagram of the Alq(3) with respect to the vacuum level. This modifies the height of the barrier for the injection into highest occupied molecular orbital level to 1.7 eV, indicating more difficult hole injection at this interface than expected for the undistorted energy level diagram. We believe that the interface dipole is due to the intrinsic dipole moment of the Alq(3) layer. The presented data lead to significant progress in understanding the electronic structure of LSMO/Alq(3) interface and represent a step toward the description of spin transport in organic spin valves. (literal)

Prodotto di

• Nanostrutture Magnetiche per la Spintronica e la Nanomedicina (PM.P04.006.002) (Modulo)
• Istituto per lo studio dei materiali nanostrutturati (ISMN) (Istituto)

Autore CNR

• VALENTIN DEDIU (Persona)
• ILARIA BERGENTI (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "Energy level alignment at Alq3/La0.7Sr0.3MnO3 interface for organic spintronic devices" (Insieme di parole chiave)

Incoming links:

Prodotto

• Istituto per lo studio dei materiali nanostrutturati (ISMN) (Istituto)
• Nanostrutture Magnetiche per la Spintronica e la Nanomedicina (PM.P04.006.002) (Modulo)

Autore CNR di

• VALENTIN DEDIU (Persona)
• ILARIA BERGENTI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review. B, Condensed matter and materials physics (Rivista)

Insieme di parole chiave di

• Parole chiave di "Energy level alignment at Alq3/La0.7Sr0.3MnO3 interface for organic spintronic devices" (Insieme di parole chiave)