http://www.cnr.it/ontology/cnr/individuo/prodotto/ID536
Chemistry and formation process of Ga(Al)As oxide during local anodic oxidation nanolithography (Articolo in rivista)
- Type
- Label
- Chemistry and formation process of Ga(Al)As oxide during local anodic oxidation nanolithography (Articolo in rivista) (literal)
- Anno
- 2006-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.susc.2006.01.086 (literal)
- Alternative label
Lazzarino, M; Mori, G; Sorba, L; Ercolani, D; Biasiol, G; Heun, S; Locatelli, A (2006)
Chemistry and formation process of Ga(Al)As oxide during local anodic oxidation nanolithography
in Surface science
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Lazzarino, M; Mori, G; Sorba, L; Ercolani, D; Biasiol, G; Heun, S; Locatelli, A (literal)
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- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- CNR Lab, TASC, INFM, I-34012 Trieste, Italy; Univ Trieste, I-34100 Trieste, Italy; Univ Modena, I-41100 Modena, Italy; Sincrotrone Trieste, Elettra, I-34012 Trieste, Italy (literal)
- Titolo
- Chemistry and formation process of Ga(Al)As oxide during local anodic oxidation nanolithography (literal)
- Abstract
- We present our investigation on the early stage of the photon induced desorption of oxide nanostructures grown on GaAs/AlAs/GaAs heterostructures. The oxide structures were fabricated by local anodic oxidation performed by means of an atomic force microscope. We observed that after a first rapid evolution in which a thick layer of heterogeneous material is removed, the oxide composition remains almost constant. These results support our model in which the oxidation process on a layered material resembles a melting process and produces a mixed material whose composition is the average of the initial one. (c) 2006 Elsevier B.V. All rights reserved. (literal)
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