The role of kinetics on the Mn-induced reconstructions of the GaAs(001) surface (Articolo in rivista)

Type
Label
  • The role of kinetics on the Mn-induced reconstructions of the GaAs(001) surface (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Alternative label
  • Colonna S., Placidi E., Ronci F., Cricenti A., Arciprete F., Balzarotti A. (2011)
    The role of kinetics on the Mn-induced reconstructions of the GaAs(001) surface
    in Journal of applied physics
    (literal)
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  • Colonna S., Placidi E., Ronci F., Cricenti A., Arciprete F., Balzarotti A. (literal)
Pagina inizio
  • 123522 (literal)
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  • 109 (literal)
Rivista
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  • http://dx.doi.org/10.1063/1.3601518 (literal)
Note
  • ISI Web of Science (WOS) (literal)
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  • CNR-Istituto di Struttura della Materia, Via del Fosso del Cavaliere 100, 00133 Roma, Italy Dipartimento di Fisica, Università di Roma ‘‘Tor Vergata’’, Via della Ricerca Scientifica 1, 00133 Roma, Italy (literal)
Titolo
  • The role of kinetics on the Mn-induced reconstructions of the GaAs(001) surface (literal)
Abstract
  • A combined scanning tunneling microscopy and low-energy electron diffraction investigation of the Mn/GaAs(001) interface formation is reported. The interface, grown on a (2 × 4) reconstructed substrate produced by molecular beam epitaxy, was studied as a function of Mn evaporation with thickness ranging from 1/8 ML to 1 ML. The interaction of Mn atoms with the semiconductor surface is strong and leads to surface reconstructions involving a rearrangement of the two outmost atomic layers of the substrate. For Mn thickness lower than 1/2 ML, the surface is characterized by a (2 × 1) periodicity. Conversely, when the Mn deposition is increased to 1/2 ML the surface reconstruction is strongly dependent on the preparation procedure. If Mn deposition is performed on the substrate at 390 °C, a fully ordered surface characterized by a clear (2 × 2) reconstruction is obtained, whereas, annealing the sample after Mn deposition, gives a disordered surface with a (2 × 1) symmetry. An intermediate phase between (2 × 1) and (2 × 2) is found for Mn depositions in between 1/4 and 1/2 ML. No further structural evolution was observed for both preparation methods above 1/2 ML coverage. (literal)
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