Magnetism and carrier modulation in (Ga,Mn)As/organic-dye hybrid devices (Articolo in rivista)

Type
Label
  • Magnetism and carrier modulation in (Ga,Mn)As/organic-dye hybrid devices (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Alternative label
  • Herrera Diez L., Konuma M., Placidi E., Arciprete F., Rushforth A.W., Campion R.P., Gallagher B.L., Honolka J., Kern K. (2011)
    Magnetism and carrier modulation in (Ga,Mn)As/organic-dye hybrid devices
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Herrera Diez L., Konuma M., Placidi E., Arciprete F., Rushforth A.W., Campion R.P., Gallagher B.L., Honolka J., Kern K. (literal)
Pagina inizio
  • 022503 (literal)
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  • 98 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • http://dx.doi.org/10.1063/1.3543843 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, Stuttgart 70569, Germany Dipartimento di Fisica, Università di Roma “Tor Vergata”, Roma I-00133, Italy and CNR-INFM, Via della Ricerca Scientifica 1, Roma I-00133, Italy School of Physics and Astronomy, University of Nottingham, University Park, Nottingham NG7 2RD, United Kingdom (literal)
Titolo
  • Magnetism and carrier modulation in (Ga,Mn)As/organic-dye hybrid devices (literal)
Abstract
  • We present the manipulation of magnetic and electrical properties of (Ga,Mn)As via the adsorption of dye-molecules as a step toward the realization of light-controlled magnetic-semiconductor/dye hybrid devices. A significant lowering of the Curie temperature with a corresponding increase in electrical resistance and a higher coercive field is found for the (Ga,Mn)As/fluorescein system with respect to (Ga,Mn)As. Upon exposure to visible light a shift in Curie temperature toward higher values as well as a reduction of the electrical resistance and the coercive field can be achieved. This points toward a hole quenching effect at the molecule-(Ga,Mn)As interface which is susceptible to light exposure. (literal)
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