Magnetoelectric properties of oxygenated (Ga,Mn)As (Articolo in rivista)

Type
Label
  • Magnetoelectric properties of oxygenated (Ga,Mn)As (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.83.094420 (literal)
Alternative label
  • Herrera Diez L., Konuma M., Kremer R.K., Honolka J., K. Kern K., Placidi E., Arciprete F. (2011)
    Magnetoelectric properties of oxygenated (Ga,Mn)As
    in Physical review. B, Condensed matter and materials physics; The American Physical Society, Ridge, NY (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Herrera Diez L., Konuma M., Kremer R.K., Honolka J., K. Kern K., Placidi E., Arciprete F. (literal)
Pagina inizio
  • 094420 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 83 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • http://dx.doi.org/10.1103/PhysRevB.83.094420 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569, Stuttgart, Germany Dipartimento di Fisica, Università di Roma“Tor Vergata,” and CNR-INFM, Via della Ricerca Scientifica 1, I-00133 Roma, Italy CNR - Istituto di Struttura della Materia, via del Fosso del Cavaliere 100, 00133 ROMA, Italy (literal)
Titolo
  • Magnetoelectric properties of oxygenated (Ga,Mn)As (literal)
Abstract
  • The effect of oxygen plasma exposure on the magnetoelectrical properties of (Ga,Mn)As films is investigated. A significant increase in the oxygen content of the plasma-treated (Ga,Mn)As is visible in depth-profile x-ray photoelectron spectroscopy. The temperature dependence of the electrical resistance shows that after oxygenation the (Ga,Mn)As films become more resistive and that the distinct peak accounting for the Curie temperature shifts to lower temperatures. In addition, larger coercive fields for all in-plane directions are observed in the magnetoresistance signal after the treatment. X-ray absorption spectroscopy evidences the preservation of the electronic d5 state of the Mn atoms after oxygenation. This indicates that the changes in the electrical and consequently in the magnetic properties occur via a hole compensation mechanism promoted by the oxygen species incorporated during the plasma exposure. (literal)
Editore
Prodotto di
Autore CNR

Incoming links:


Prodotto
Autore CNR di
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Editore di
data.CNR.it