Nano-patterning of perpendicular magnetic recording media by low-energy implantation of chemically reactive ions (Articolo in rivista)

Type
Label
  • Nano-patterning of perpendicular magnetic recording media by low-energy implantation of chemically reactive ions (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.jmmm.2010.04.023 (literal)
Alternative label
  • Martín-González M.S. (a), Briones F. (a), García-Martín J.M. (a), Montserrat J. (b), Vila L. (c), Faini G. (c), Testa A.M. (d), Fiorani D. (d), Rohrmann H. (e) (2010)
    Nano-patterning of perpendicular magnetic recording media by low-energy implantation of chemically reactive ions
    in Journal of magnetism and magnetic materials
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Martín-González M.S. (a), Briones F. (a), García-Martín J.M. (a), Montserrat J. (b), Vila L. (c), Faini G. (c), Testa A.M. (d), Fiorani D. (d), Rohrmann H. (e) (literal)
Pagina inizio
  • 2762 (literal)
Pagina fine
  • 2768 (literal)
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  • 322 (literal)
Rivista
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  • http://dx.doi.org/10.1016/j.jmmm.2010.04.023 (literal)
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  • 7 (literal)
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  • 18 (literal)
Note
  • ISI Web of Science (WOS) (literal)
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  • a) Instituto de Microelectrónica de Madrid, IMM (CNM-CSIC) C/Isaac Newton, 8 (PTM) 28760 Tres Cantos, Madrid, Spain; b) Instituto de Microelectrónica de Barcelona, IMB (CNM-CSIC), Campus Universitat Autònoma Barcelona, E-08193 Bellaterra, Spain; c) Laboratoire de Photonique et de Nanostructures LPN-CNRS, Route de Nozay, 91460 Marcoussis, France; d) Istituto di Struttura della Materia, Area della Ricerca di Roma-CNR, C.P. 10, 00016 Monterotondo Scalo, Roma, Italy; e) Oerlikon Systems, Iramali 18, FL-9496 Balzers, Liechtenstein; (literal)
Titolo
  • Nano-patterning of perpendicular magnetic recording media by low-energy implantation of chemically reactive ions (literal)
Abstract
  • Magnetic nano-patterning of perpendicular hard disk media with perpendicular anisotropy, but preserving disk surface planarity, is presented here. Reactive ion implantation is used to locally modify the chemical composition (hence the magnetization and magnetic anisotropy) of the Co/Pd multilayer in irradiated areas. The procedure involves low energy, chemically reactive ion irradiation through a resist mask. Among N, P and As ions, P are shown to be most adequate to obtain optimum bit density and topography flatness for industrial Co/Pd multilayer media. The effect of this ion contributes to isolate perpendicular bits by destroying both anisotropy and magnetic exchange in the irradiated areas. Low ion fluences are effective due to the stabilization of atomic displacement levels by the chemical effect of covalent impurities. (literal)
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