XPS and STM study of Mn incorporation on the GaAs(001) surface (Articolo in rivista)

Type
Label
  • XPS and STM study of Mn incorporation on the GaAs(001) surface (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.spmi.2008.12.021 (literal)
Alternative label
  • Thorpe S.D., Arciprete F., Placidi E., Patella F., Fanfoni M., Balzarotti A., Colonna S., Ronci F., Cricenti A., Verdini A., Floreano L., Morgante A. (2009)
    XPS and STM study of Mn incorporation on the GaAs(001) surface
    in Superlattices and microstructures
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Thorpe S.D., Arciprete F., Placidi E., Patella F., Fanfoni M., Balzarotti A., Colonna S., Ronci F., Cricenti A., Verdini A., Floreano L., Morgante A. (literal)
Pagina inizio
  • 258 (literal)
Pagina fine
  • 265 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.sciencedirect.com/science/article/pii/S0749603608003054 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 46 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • http://dx.doi.org/10.1016/j.spmi.2008.12.021 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Dipartimento di Fisica, Università di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, 00133 Roma, Italy; CNR–INFM, Via della Ricerca Scientifica 1, 00133 Roma, Italy; Istituto di Struttura della Materia, CNR, Via del Fosso del Cavaliere 100, 00133 Roma, Italy; Laboratorio TASC-INFM, Area Science Park, Basovizza, S.S. 14Km 163.4, 34012 Trieste, Italy (literal)
Titolo
  • XPS and STM study of Mn incorporation on the GaAs(001) surface (literal)
Abstract
  • The study of the early stage of Mn growth on GaAs(001)-c(4×4) surface has been performed by in situ Scanning Tunneling Microscopy and X-ray Photoelectron Spectroscopy. Starting from GaAs(001) grown by molecular beam epitaxy, the surface was investigated after Mn deposition and after low temperature annealing at about 250 ring operatorC. The aim of this work is to understand the mechanism of Mn–As interaction and the behavior of Mn on the GaAs(001) substrate. The results demonstrate the high reactivity and mobility of Mn with the formation of compounds such as Mn subarsenide (MnAsx), MnAs (confirmed by STM results) and, probably, GaMnAs. (literal)
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