Local structure of (Ga,Fe)N and (Ga,Fe)N:Si investigated by x-ray absorption fine structure spectroscopy (Articolo in rivista)

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  • Local structure of (Ga,Fe)N and (Ga,Fe)N:Si investigated by x-ray absorption fine structure spectroscopy (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Alternative label
  • Rovezzi M., D'Acapito F., Navarro-Quezada A., Faina B., Li T., Bonanni A., Filippone F., Amore Bonapasta A., Dietl T. (2009)
    Local structure of (Ga,Fe)N and (Ga,Fe)N:Si investigated by x-ray absorption fine structure spectroscopy
    in Physical review. B, Condensed matter and materials physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Rovezzi M., D'Acapito F., Navarro-Quezada A., Faina B., Li T., Bonanni A., Filippone F., Amore Bonapasta A., Dietl T. (literal)
Pagina inizio
  • 195209 (literal)
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  • 79 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • http://dx.doi.org/10.1103/PhysRevB.79.195209 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Italian Collaborating Research Group, BM08 “GILDA,” ESRF, BP 220, F-38043 Grenoble, France and Operative Group in Grenoble (OGG), Consiglio Nazionale delle Ricerche, INFM, BP 220, F-38043 Grenoble, France; Institute for Semiconductor and Solid State Physics, Johannes Kepler University, A-4040 Linz, Austria; Istituto di Struttura della Materia (ISM), Consiglio Nazionale delle Ricerche, Via Salaria Km 29.5, CP 10, 00016 Monterotondo Stazione, Italy; Institute of Physics, Polish Academy of Sciences, PL-02-668 Warszawa, Poland and Institute of Theoretical Physics, University of Warsaw, PL-00-681 Warszawa, Poland (literal)
Titolo
  • Local structure of (Ga,Fe)N and (Ga,Fe)N:Si investigated by x-ray absorption fine structure spectroscopy (literal)
Abstract
  • X-ray absorption fine-structure (XAFS) measurements supported by ab initio computations within the density functional theory (DFT) are employed to systematically characterize Fe-doped as well as Fe- and Si-codoped films grown by metalorganic vapor-phase epitaxy. The analysis of extended-XAFS data shows that depending on the growth conditions, Fe atoms either occupy Ga substitutional sites in GaN or precipitate in the form of õ-Fe3N nanocrystals, which are ferromagnetic and metallic according to the DFT results. Precipitation can be hampered by reducing the Fe content, by increasing the growth rate, or by codoping with Si. The near-edge region of the XAFS spectra provides information on the Fe charge state and shows its partial reduction from Fe+3 to Fe+2 upon Si codoping, in agreement with the Fe electronic configurations expected within various implementations of DFT. (literal)
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