http://www.cnr.it/ontology/cnr/individuo/prodotto/ID52250
Mn0.06Ge0.94 diluted magnetic semiconductor epitaxially grown on Ge(001): Influence of Mn5Ge3 nanoscopic clusters on the electronic and magnetic properties (Articolo in rivista)
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- Mn0.06Ge0.94 diluted magnetic semiconductor epitaxially grown on Ge(001): Influence of Mn5Ge3 nanoscopic clusters on the electronic and magnetic properties (Articolo in rivista) (literal)
- Anno
- 2008-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1103/PhysRevB.77.045203 (literal)
- Alternative label
De Padova P. (1); Ayoub J.P. (2); Berbezier I. (2); Perfetti P. (1); Quaresima C. (1); Testa A.M. (1); Fiorani D. (1); Olivieri B. (3); Mariot J.-M. (4); Taleb-Ibrahimi A. (5); Richter M.C. (6); Heckmann O. (6); Hricovini K. (6) (2008)
Mn0.06Ge0.94 diluted magnetic semiconductor epitaxially grown on Ge(001): Influence of Mn5Ge3 nanoscopic clusters on the electronic and magnetic properties
in Physical review. B, Condensed matter and materials physics
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- De Padova P. (1); Ayoub J.P. (2); Berbezier I. (2); Perfetti P. (1); Quaresima C. (1); Testa A.M. (1); Fiorani D. (1); Olivieri B. (3); Mariot J.-M. (4); Taleb-Ibrahimi A. (5); Richter M.C. (6); Heckmann O. (6); Hricovini K. (6) (literal)
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- ISI Web of Science (WOS) (literal)
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- (1) CNR, Istituto Struttura Materia, I-00133 Rome, Italy;
(2) Faculté Sciences & Techniques Marseille, UMR 6137, Lab Materiaux & Microelect Provence, F-13397 Marseille, France;
(3) CNR, Istituto Scienze Atmosfera Clima, I-00133 Rome, Italy;
(4) Université Paris 06, UMR 7614, Laboratoire Chimie Physique Matière & Rayonnement, F-75231 Paris 05, France;
(5) Synchrotron SOLEIL, F-91192 Gif Sur Yvette, France;
(6) Université Cergy Pontoise, Laboratoire Physique Materiaux et Surfaces, F-95031 Cergy Pontoise, France (literal)
- Titolo
- Mn0.06Ge0.94 diluted magnetic semiconductor epitaxially grown on Ge(001): Influence of Mn5Ge3 nanoscopic clusters on the electronic and magnetic properties (literal)
- Abstract
- The structural, electronic, and magnetic properties of the Mn0.06Ge0.94 diluted magnetic semiconductor, grown at 520 K by molecular-beam epitaxy on Ge(001)2x1, have been investigated. Diluted and highly ordered alloys, containing Mn5Ge3 nanocrystals, were grown. The valence band photoelectron spectrum of Mn0.06Ge0.94 shows a feature located at -4.2 eV below the Fermi level, which is the fingerprint of substitutional Mn atoms in the Ge matrix. Magnetization measurements show the presence of a paramagnetic component due to substitutional Mn atoms and of a ferromagneticlike component due to Mn5Ge3 nanocrystallites. The Mn L-2,L-3 x-ray absorption spectrum of this polyphase film shows no marked multiplet structure, but a bandlike character. (literal)
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