H-Induced Dangling Bonds in H–Isoelectronic-Impurity Complexes Formed in GaAs(1-y)Ny Alloys (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• H-Induced Dangling Bonds in H–Isoelectronic-Impurity Complexes Formed in GaAs(1-y)Ny Alloys (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevLett.98.206403 (literal)

Alternative label

• Amore Bonapasta A., Filippone F., Mattioli G. (2007)
  H-Induced Dangling Bonds in H–Isoelectronic-Impurity Complexes Formed in GaAs(1-y)Ny Alloys
  in Physical review letters (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Amore Bonapasta A., Filippone F., Mattioli G. (literal)

Pagina inizio

• 206403 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 98 (literal)

Rivista

• Physical review letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 20 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• ISM - CNR (literal)

Titolo

• H-Induced Dangling Bonds in H–Isoelectronic-Impurity Complexes Formed in GaAs(1-y)Ny Alloys (literal)

Abstract

• Complexes formed by H and the isoelectronic impurity N in GaAs1-yNy alloys have been widely investigated because the significant effects of N on the GaAs properties and their passivation by H represent a unique tool for a defect engineering of semiconductors. However, available results still present a quite puzzling picture. Both the N-H₂^* and C2v complexes proposed by theory were challenged indeed by experimental results. In the present Letter, we disclose a double-faced behavior of a H atom interacting with an isoelectronic impurity: while H, on one side, binds to N and induces the formation of dangling bonds (DB) on its Ga neighbors, on the other side, it saturates these DBs, thus permitting the formation of multiple-H complexes. This peculiar H behavior fully explains the experimental findings and likely represents a general feature of H–isoelectronic-impurity interactions. (literal)

Prodotto di

• Institute of structure of matter (ISM) (Istituto)
• Studi teorici a livello atomico e subnanometrico di difetti e complessi in semiconduttori (MD.P06.004.002) (Modulo)

Autore CNR

• FRANCESCO FILIPPONE (Unità di personale interno)
• ALDO AMORE BONAPASTA (Persona)
• GIUSEPPE MATTIOLI (Unità di personale interno)

Incoming links:

Autore CNR di

• ALDO AMORE BONAPASTA (Persona)
• FRANCESCO FILIPPONE (Unità di personale interno)
• GIUSEPPE MATTIOLI (Unità di personale interno)

Prodotto

• Institute of structure of matter (ISM) (Istituto)
• Studi teorici a livello atomico e subnanometrico di difetti e complessi in semiconduttori (MD.P06.004.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review letters (Rivista)